Thermal oxidation of Ni films for p-type thin-film transistors
p-Type nanocrystal NiO-based thin-film transistors (TFTs) are fabricated by simply oxidizing thin Ni films at temperatures as low as 400 °C. The highest field-effect mobility in a linear region and the current on–off ratio are found to be 5.2 cm2 V−1 s−1 and 2.2 × 103, respectively. X-ray diffractio...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/98646 http://hdl.handle.net/10220/17456 |
| _version_ | 1826116298020487168 |
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| author | Wang, Xinghui Zhang, Qing Jiang, Jie Li, Jingqi Zhang, X. X. |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Wang, Xinghui Zhang, Qing Jiang, Jie Li, Jingqi Zhang, X. X. |
| author_sort | Wang, Xinghui |
| collection | NTU |
| description | p-Type nanocrystal NiO-based thin-film transistors (TFTs) are fabricated by simply oxidizing thin Ni films at temperatures as low as 400 °C. The highest field-effect mobility in a linear region and the current on–off ratio are found to be 5.2 cm2 V−1 s−1 and 2.2 × 103, respectively. X-ray diffraction, transmission electron microscopy and electrical performances of the TFTs with “top contact” and “bottom contact” channels suggest that the upper parts of the Ni films are clearly oxidized. In contrast, the lower parts in contact with the gate dielectric are partially oxidized to form a quasi-discontinuous Ni layer, which does not fully shield the gate electric field, but still conduct the source and drain current. This simple method for producing p-type TFTs may be promising for the next-generation oxide-based electronic applications. |
| first_indexed | 2024-10-01T04:08:43Z |
| format | Journal Article |
| id | ntu-10356/98646 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:08:43Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/986462020-03-07T13:57:29Z Thermal oxidation of Ni films for p-type thin-film transistors Wang, Xinghui Zhang, Qing Jiang, Jie Li, Jingqi Zhang, X. X. School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering p-Type nanocrystal NiO-based thin-film transistors (TFTs) are fabricated by simply oxidizing thin Ni films at temperatures as low as 400 °C. The highest field-effect mobility in a linear region and the current on–off ratio are found to be 5.2 cm2 V−1 s−1 and 2.2 × 103, respectively. X-ray diffraction, transmission electron microscopy and electrical performances of the TFTs with “top contact” and “bottom contact” channels suggest that the upper parts of the Ni films are clearly oxidized. In contrast, the lower parts in contact with the gate dielectric are partially oxidized to form a quasi-discontinuous Ni layer, which does not fully shield the gate electric field, but still conduct the source and drain current. This simple method for producing p-type TFTs may be promising for the next-generation oxide-based electronic applications. 2013-11-08T05:33:13Z 2019-12-06T19:58:04Z 2013-11-08T05:33:13Z 2019-12-06T19:58:04Z 2013 2013 Journal Article Jiang, J., Wang, X., Zhang, Q., Li, J., & Zhang, X. X. (2013). Thermal oxidation of Ni films for p-type thin-film transistors. Physical chemistry chemical physics, 15(18), 6875-6878. https://hdl.handle.net/10356/98646 http://hdl.handle.net/10220/17456 10.1039/c3cp50197c en Physical chemistry chemical physics |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Wang, Xinghui Zhang, Qing Jiang, Jie Li, Jingqi Zhang, X. X. Thermal oxidation of Ni films for p-type thin-film transistors |
| title | Thermal oxidation of Ni films for p-type thin-film transistors |
| title_full | Thermal oxidation of Ni films for p-type thin-film transistors |
| title_fullStr | Thermal oxidation of Ni films for p-type thin-film transistors |
| title_full_unstemmed | Thermal oxidation of Ni films for p-type thin-film transistors |
| title_short | Thermal oxidation of Ni films for p-type thin-film transistors |
| title_sort | thermal oxidation of ni films for p type thin film transistors |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/98646 http://hdl.handle.net/10220/17456 |
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