The temperature dependent TCAD and SPICE modeling of AlGaN/GaN HEMTs
In this work, the temperature dependent TCAD and SPICE modeling platform of AlGaN/GaN HEMTs has been established by using Sentaurus TCAD and Silvaco UTMOST IV. Typically, the temperature co-efficient of series resistance, trans-conductance, sub-threshold swing and gate/buffer leakage has been extrac...
| Main Authors: | , , , , , , |
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| Format: | Conference Paper |
| Language: | English |
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2013
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| Online Access: | https://hdl.handle.net/10356/98704 http://hdl.handle.net/10220/17438 |
| _version_ | 1826120806633046016 |
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| author | Yuan, Li Wang, Weizhu Lo, Guo-Qiang Lee, Kean Boon Sun, Haifeng Selvaraj, Susai Lawrence Zhou, Xing |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Yuan, Li Wang, Weizhu Lo, Guo-Qiang Lee, Kean Boon Sun, Haifeng Selvaraj, Susai Lawrence Zhou, Xing |
| author_sort | Yuan, Li |
| collection | NTU |
| description | In this work, the temperature dependent TCAD and SPICE modeling platform of AlGaN/GaN HEMTs has been established by using Sentaurus TCAD and Silvaco UTMOST IV. Typically, the temperature co-efficient of series resistance, trans-conductance, sub-threshold swing and gate/buffer leakage has been extracted from the TCAD simulation. Based on that, the compact SPICE device model of HEMTs has been built up, which can be used for DC/transient SPICE simulation and power electronics circuit demonstration. The SPICE modeling results agree well with our TCAD simulation, indicating good revealing of the physical mechanisms of the AlGaN/GaN HEMTs' operation. |
| first_indexed | 2024-10-01T05:22:48Z |
| format | Conference Paper |
| id | ntu-10356/98704 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:22:48Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/987042020-03-07T13:24:48Z The temperature dependent TCAD and SPICE modeling of AlGaN/GaN HEMTs Yuan, Li Wang, Weizhu Lo, Guo-Qiang Lee, Kean Boon Sun, Haifeng Selvaraj, Susai Lawrence Zhou, Xing School of Electrical and Electronic Engineering IEEE International Nanoelectronics Conference (5th : 2013 : Singapore) DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics In this work, the temperature dependent TCAD and SPICE modeling platform of AlGaN/GaN HEMTs has been established by using Sentaurus TCAD and Silvaco UTMOST IV. Typically, the temperature co-efficient of series resistance, trans-conductance, sub-threshold swing and gate/buffer leakage has been extracted from the TCAD simulation. Based on that, the compact SPICE device model of HEMTs has been built up, which can be used for DC/transient SPICE simulation and power electronics circuit demonstration. The SPICE modeling results agree well with our TCAD simulation, indicating good revealing of the physical mechanisms of the AlGaN/GaN HEMTs' operation. 2013-11-08T03:57:16Z 2019-12-06T19:58:40Z 2013-11-08T03:57:16Z 2019-12-06T19:58:40Z 2013 2013 Conference Paper Yuan, L., Wang, W., Lee, K. B., Sun, H., Selvaraj, S. L., Zhou, X., & et al. (2013). The temperature dependent TCAD and SPICE modeling of AlGaN/GaN HEMTs. 2013 IEEE 5th International Nanoelectronics Conference (INEC), 115-118. https://hdl.handle.net/10356/98704 http://hdl.handle.net/10220/17438 10.1109/INEC.2013.6465971 en |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics Yuan, Li Wang, Weizhu Lo, Guo-Qiang Lee, Kean Boon Sun, Haifeng Selvaraj, Susai Lawrence Zhou, Xing The temperature dependent TCAD and SPICE modeling of AlGaN/GaN HEMTs |
| title | The temperature dependent TCAD and SPICE modeling of AlGaN/GaN HEMTs |
| title_full | The temperature dependent TCAD and SPICE modeling of AlGaN/GaN HEMTs |
| title_fullStr | The temperature dependent TCAD and SPICE modeling of AlGaN/GaN HEMTs |
| title_full_unstemmed | The temperature dependent TCAD and SPICE modeling of AlGaN/GaN HEMTs |
| title_short | The temperature dependent TCAD and SPICE modeling of AlGaN/GaN HEMTs |
| title_sort | temperature dependent tcad and spice modeling of algan gan hemts |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics |
| url | https://hdl.handle.net/10356/98704 http://hdl.handle.net/10220/17438 |
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