AlGaN/GaN-on-silicon metal–oxide–semiconductor high-electron-mobility transistor with breakdown voltage of 800 V and on-state resistance of 3 mΩ·cm2 using a complementary metal–oxide–semiconductor compatible gold-free process

AlGaN/GaN-on-silicon metal–oxide–semiconductor high-electron-mobility transistor with breakdown voltage of 800 V and on-state resistance of 3 mΩ·cm2 using a complementary metal–oxide–semiconductor compatible gold-free process

This letter reports the fabrication and characterization of undoped AlGaN/GaN-on-silicon metal–oxide–semiconductor high-electron-mobility transistors (MOS-HEMTs) using a complementary metal–oxide–semiconductor (CMOS) compatible gold-free process. Devices with a gate-to-drain LGD spacing of 5 µm achi...

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Detalhes bibliográficos
Main Authors: Yeo, Yee-Chia, Liu, Xinke, Zhan, Chunlei, Chan, Kwok Wai, Liu, Wei, Tan, Leng Seow, Chen, Kevin Jing
Outros Autores: School of Electrical and Electronic Engineering
Formato: Journal Article
Idioma:English
Publicado em: 2013
Assuntos:
DRNTU::Engineering::Electrical and electronic engineering
Acesso em linha:https://hdl.handle.net/10356/98801
http://hdl.handle.net/10220/12574

Internet

https://hdl.handle.net/10356/98801
http://hdl.handle.net/10220/12574

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