Effects of point defect healing on phosphorus implanted germanium n+/p junction and its thermal stability
In this work, the effect of Ge point defect healing process between 550 °C and 650 °C is investigated, in the aspect of leakage (off) current and junction depth of Ge n+/p junction diodes using ECV, TEM, J-V, and SIMS analyses. After 600 °C anneal, off-current density (2 × 10−4 A/cm2) is dramaticall...
| Main Authors: | , , , , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
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2013
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| Online Access: | https://hdl.handle.net/10356/98847 http://hdl.handle.net/10220/13441 |
| _version_ | 1811681063724908544 |
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| author | Lee, In-Yeal Shin, Jeong-hun Choi, Daebeom Baek, Jung Woo Heo, Jonggon Park, Wonkyu Leem, Jung Woo Yu, Jae Su Jung, Woo-Shik Saraswat, Krishna Park, Jin-Hong Shim, Jaewoo |
| author2 | School of Mechanical and Aerospace Engineering |
| author_facet | School of Mechanical and Aerospace Engineering Lee, In-Yeal Shin, Jeong-hun Choi, Daebeom Baek, Jung Woo Heo, Jonggon Park, Wonkyu Leem, Jung Woo Yu, Jae Su Jung, Woo-Shik Saraswat, Krishna Park, Jin-Hong Shim, Jaewoo |
| author_sort | Lee, In-Yeal |
| collection | NTU |
| description | In this work, the effect of Ge point defect healing process between 550 °C and 650 °C is investigated, in the aspect of leakage (off) current and junction depth of Ge n+/p junction diodes using ECV, TEM, J-V, and SIMS analyses. After 600 °C anneal, off-current density (2 × 10−4 A/cm2) is dramatically reduced due to the defect healing phenomenon that decreases the number of point defects, subsequently providing a higher on/off-current ratio of 5 × 103. In spite of the high healing temperature, junction diodes seem not to suffer from the deep diffusion of phosphorus (P) in Ge because those diffuse mostly through VGe. In addition, it is also confirmed that Ti is an appropriate material in terms of diffusion barrier and diffusivity for Ge n+/p junction contact metal. |
| first_indexed | 2024-10-01T03:34:59Z |
| format | Journal Article |
| id | ntu-10356/98847 |
| institution | Nanyang Technological University |
| last_indexed | 2024-10-01T03:34:59Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/988472023-03-04T17:18:54Z Effects of point defect healing on phosphorus implanted germanium n+/p junction and its thermal stability Lee, In-Yeal Shin, Jeong-hun Choi, Daebeom Baek, Jung Woo Heo, Jonggon Park, Wonkyu Leem, Jung Woo Yu, Jae Su Jung, Woo-Shik Saraswat, Krishna Park, Jin-Hong Shim, Jaewoo School of Mechanical and Aerospace Engineering In this work, the effect of Ge point defect healing process between 550 °C and 650 °C is investigated, in the aspect of leakage (off) current and junction depth of Ge n+/p junction diodes using ECV, TEM, J-V, and SIMS analyses. After 600 °C anneal, off-current density (2 × 10−4 A/cm2) is dramatically reduced due to the defect healing phenomenon that decreases the number of point defects, subsequently providing a higher on/off-current ratio of 5 × 103. In spite of the high healing temperature, junction diodes seem not to suffer from the deep diffusion of phosphorus (P) in Ge because those diffuse mostly through VGe. In addition, it is also confirmed that Ti is an appropriate material in terms of diffusion barrier and diffusivity for Ge n+/p junction contact metal. Published version 2013-09-13T01:40:14Z 2019-12-06T20:00:16Z 2013-09-13T01:40:14Z 2019-12-06T20:00:16Z 2013 2013 Journal Article Shim, J., Shin, J., Lee, I.-Y., Choi, D., Baek, J. W., Heo, J., Park, W., Leem, J. W., Yu, J. S., Jung, W.-S., Saraswat, K.,& Park, J.-H. (2013). Effects of point defect healing on phosphorus implanted germanium n+/p junction and its thermal stability. Journal of Applied Physics, 114(9), 094515. 0021-8979 https://hdl.handle.net/10356/98847 http://hdl.handle.net/10220/13441 10.1063/1.4820580 174612 Journal of applied physics © 2013 AIP Publishing LLC. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4820580]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf |
| spellingShingle | Lee, In-Yeal Shin, Jeong-hun Choi, Daebeom Baek, Jung Woo Heo, Jonggon Park, Wonkyu Leem, Jung Woo Yu, Jae Su Jung, Woo-Shik Saraswat, Krishna Park, Jin-Hong Shim, Jaewoo Effects of point defect healing on phosphorus implanted germanium n+/p junction and its thermal stability |
| title | Effects of point defect healing on phosphorus implanted germanium n+/p junction and its thermal stability |
| title_full | Effects of point defect healing on phosphorus implanted germanium n+/p junction and its thermal stability |
| title_fullStr | Effects of point defect healing on phosphorus implanted germanium n+/p junction and its thermal stability |
| title_full_unstemmed | Effects of point defect healing on phosphorus implanted germanium n+/p junction and its thermal stability |
| title_short | Effects of point defect healing on phosphorus implanted germanium n+/p junction and its thermal stability |
| title_sort | effects of point defect healing on phosphorus implanted germanium n p junction and its thermal stability |
| url | https://hdl.handle.net/10356/98847 http://hdl.handle.net/10220/13441 |
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