Comparison of electromigration simulation in test structure and actual circuit
With the rapid increase in circuit complexity, accurate reliability simulator is necessary as reliability testing for fabricated circuit is progressively more time and resource consuming. Simple 2D electromigration (EM) simulator has many limitations and most of the 3D EM simulations in the literatu...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/98921 http://hdl.handle.net/10220/12570 |
| _version_ | 1826110202028490752 |
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| author | He, Feifei Tan, Cher Ming |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering He, Feifei Tan, Cher Ming |
| author_sort | He, Feifei |
| collection | NTU |
| description | With the rapid increase in circuit complexity, accurate reliability simulator is necessary as reliability testing for fabricated circuit is progressively more time and resource consuming. Simple 2D electromigration (EM) simulator has many limitations and most of the 3D EM simulations in the literature are using simple line-via structure which is only part of the real circuit structure. In this paper, a thorough comparison between simple 3D line-via structure model and 3D circuit model under different test conditions is performed using class-AB amplifier as an example, and the results showed that simple line-via structure simulation may not always correctly represent the real circuit failure site. |
| first_indexed | 2024-10-01T02:30:32Z |
| format | Journal Article |
| id | ntu-10356/98921 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:30:32Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/989212020-03-07T14:00:29Z Comparison of electromigration simulation in test structure and actual circuit He, Feifei Tan, Cher Ming School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering With the rapid increase in circuit complexity, accurate reliability simulator is necessary as reliability testing for fabricated circuit is progressively more time and resource consuming. Simple 2D electromigration (EM) simulator has many limitations and most of the 3D EM simulations in the literature are using simple line-via structure which is only part of the real circuit structure. In this paper, a thorough comparison between simple 3D line-via structure model and 3D circuit model under different test conditions is performed using class-AB amplifier as an example, and the results showed that simple line-via structure simulation may not always correctly represent the real circuit failure site. 2013-07-31T03:38:23Z 2019-12-06T20:01:09Z 2013-07-31T03:38:23Z 2019-12-06T20:01:09Z 2011 2011 Journal Article He, F.,& Tan, C. M. (2012). Comparison of electromigration simulation in test structure and actual circuit. Applied Mathematical Modelling, 36(10), 4908-4917. 0307-904X https://hdl.handle.net/10356/98921 http://hdl.handle.net/10220/12570 10.1016/j.apm.2011.12.028 en Applied mathematical modelling |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering He, Feifei Tan, Cher Ming Comparison of electromigration simulation in test structure and actual circuit |
| title | Comparison of electromigration simulation in test structure and actual circuit |
| title_full | Comparison of electromigration simulation in test structure and actual circuit |
| title_fullStr | Comparison of electromigration simulation in test structure and actual circuit |
| title_full_unstemmed | Comparison of electromigration simulation in test structure and actual circuit |
| title_short | Comparison of electromigration simulation in test structure and actual circuit |
| title_sort | comparison of electromigration simulation in test structure and actual circuit |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/98921 http://hdl.handle.net/10220/12570 |
| work_keys_str_mv | AT hefeifei comparisonofelectromigrationsimulationinteststructureandactualcircuit AT tancherming comparisonofelectromigrationsimulationinteststructureandactualcircuit |