Resistive switching behavior of partially anodized aluminum thin film at elevated temperatures
Resistive switching behavior of partially anodized aluminum thin film has been investigated at temperatures of 25 °C–250 °C. Both the reset and set voltages decrease with increasing temperature, showing Arrhenius-like dependence with small activation energies. The pulse voltage experiment also sugge...
| Main Authors: | , , , , |
|---|---|
| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/98989 http://hdl.handle.net/10220/13478 |
| _version_ | 1811686099275218944 |
|---|---|
| author | Zhu, Wei Chen, Tupei Yang, Ming Liu, Yang Fung, Stevenson Hon Yuen |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Zhu, Wei Chen, Tupei Yang, Ming Liu, Yang Fung, Stevenson Hon Yuen |
| author_sort | Zhu, Wei |
| collection | NTU |
| description | Resistive switching behavior of partially anodized aluminum thin film has been investigated at temperatures of 25 °C–250 °C. Both the reset and set voltages decrease with increasing temperature, showing Arrhenius-like dependence with small activation energies. The pulse voltage experiment also suggests that the conductive filament breaking/reconnection is easier to occur at a higher temperature. Some possible mechanisms for the phenomena are discussed. On the other hand, at elevated temperatures without continuous electric field applied, while the high-resistance state exhibits no significant change with time, the low-resistance state (LRS) shows a continuous degradation, and there is a sudden failure. The LRS failure time shows Arrhenius dependence with an activation energy of ~1.3 eV, suggesting that the LRS failure could be due to the migration of the excess Al atoms at high temperatures. |
| first_indexed | 2024-10-01T04:55:02Z |
| format | Journal Article |
| id | ntu-10356/98989 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:55:02Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/989892020-03-07T14:00:29Z Resistive switching behavior of partially anodized aluminum thin film at elevated temperatures Zhu, Wei Chen, Tupei Yang, Ming Liu, Yang Fung, Stevenson Hon Yuen School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Resistive switching behavior of partially anodized aluminum thin film has been investigated at temperatures of 25 °C–250 °C. Both the reset and set voltages decrease with increasing temperature, showing Arrhenius-like dependence with small activation energies. The pulse voltage experiment also suggests that the conductive filament breaking/reconnection is easier to occur at a higher temperature. Some possible mechanisms for the phenomena are discussed. On the other hand, at elevated temperatures without continuous electric field applied, while the high-resistance state exhibits no significant change with time, the low-resistance state (LRS) shows a continuous degradation, and there is a sudden failure. The LRS failure time shows Arrhenius dependence with an activation energy of ~1.3 eV, suggesting that the LRS failure could be due to the migration of the excess Al atoms at high temperatures. 2013-09-16T06:30:21Z 2019-12-06T20:02:04Z 2013-09-16T06:30:21Z 2019-12-06T20:02:04Z 2012 2012 Journal Article Zhu, W., Chen, T., Yang, M., Liu, Y., & Fung, S. H. Y. (2012). Resistive switching behavior of partially anodized aluminum thin film at elevated temperatures. IEEE transactions on electron devices, 59(9), 2363-2367. 0018-9383 https://hdl.handle.net/10356/98989 http://hdl.handle.net/10220/13478 10.1109/TED.2012.2205692 en IEEE transactions on electron devices © 2012 IEEE |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Zhu, Wei Chen, Tupei Yang, Ming Liu, Yang Fung, Stevenson Hon Yuen Resistive switching behavior of partially anodized aluminum thin film at elevated temperatures |
| title | Resistive switching behavior of partially anodized aluminum thin film at elevated temperatures |
| title_full | Resistive switching behavior of partially anodized aluminum thin film at elevated temperatures |
| title_fullStr | Resistive switching behavior of partially anodized aluminum thin film at elevated temperatures |
| title_full_unstemmed | Resistive switching behavior of partially anodized aluminum thin film at elevated temperatures |
| title_short | Resistive switching behavior of partially anodized aluminum thin film at elevated temperatures |
| title_sort | resistive switching behavior of partially anodized aluminum thin film at elevated temperatures |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/98989 http://hdl.handle.net/10220/13478 |
| work_keys_str_mv | AT zhuwei resistiveswitchingbehaviorofpartiallyanodizedaluminumthinfilmatelevatedtemperatures AT chentupei resistiveswitchingbehaviorofpartiallyanodizedaluminumthinfilmatelevatedtemperatures AT yangming resistiveswitchingbehaviorofpartiallyanodizedaluminumthinfilmatelevatedtemperatures AT liuyang resistiveswitchingbehaviorofpartiallyanodizedaluminumthinfilmatelevatedtemperatures AT fungstevensonhonyuen resistiveswitchingbehaviorofpartiallyanodizedaluminumthinfilmatelevatedtemperatures |