Resistive switching behavior of partially anodized aluminum thin film at elevated temperatures
Resistive switching behavior of partially anodized aluminum thin film has been investigated at temperatures of 25 °C–250 °C. Both the reset and set voltages decrease with increasing temperature, showing Arrhenius-like dependence with small activation energies. The pulse voltage experiment also sugge...
| Autores principales: | , , , , |
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| Otros Autores: | |
| Formato: | Journal Article |
| Lenguaje: | English |
| Publicado: |
2013
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| Materias: | |
| Acceso en línea: | https://hdl.handle.net/10356/98989 http://hdl.handle.net/10220/13478 |