Passivation of Cu surface and its application in Cu-Cu bonding for high density 3D IC realization
Email Print Request Permissions In this invited paper, a non-UHV and non-corrosive method using self-assembled monolayer (SAM) to passivate Cu surface to prevent oxidation and contamination is investigated. The final goal is to enable low temperature Cu-Cu bonding for high...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Conference Paper |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/99123 http://hdl.handle.net/10220/12805 |
| _version_ | 1811677559494017024 |
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| author | Tan, Chuan Seng Lim, Dau Fatt Peng, Lan Li, Hong Yu |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Tan, Chuan Seng Lim, Dau Fatt Peng, Lan Li, Hong Yu |
| author_sort | Tan, Chuan Seng |
| collection | NTU |
| description | Email
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In this invited paper, a non-UHV and non-corrosive method using self-assembled monolayer (SAM) to passivate Cu surface to prevent oxidation and contamination is investigated. The final goal is to enable low temperature Cu-Cu bonding for high density 3D IC realization. |
| first_indexed | 2024-10-01T02:39:18Z |
| format | Conference Paper |
| id | ntu-10356/99123 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:39:18Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/991232020-03-07T13:24:49Z Passivation of Cu surface and its application in Cu-Cu bonding for high density 3D IC realization Tan, Chuan Seng Lim, Dau Fatt Peng, Lan Li, Hong Yu School of Electrical and Electronic Engineering IEEE International Workshop on Low Temperature Bonding for 3D Integration (3rd : 2012 : Tokyo, Japan) Email Print Request Permissions In this invited paper, a non-UHV and non-corrosive method using self-assembled monolayer (SAM) to passivate Cu surface to prevent oxidation and contamination is investigated. The final goal is to enable low temperature Cu-Cu bonding for high density 3D IC realization. 2013-08-01T06:07:20Z 2019-12-06T20:03:37Z 2013-08-01T06:07:20Z 2019-12-06T20:03:37Z 2012 2012 Conference Paper https://hdl.handle.net/10356/99123 http://hdl.handle.net/10220/12805 10.1109/LTB-3D.2012.6238046 en |
| spellingShingle | Tan, Chuan Seng Lim, Dau Fatt Peng, Lan Li, Hong Yu Passivation of Cu surface and its application in Cu-Cu bonding for high density 3D IC realization |
| title | Passivation of Cu surface and its application in Cu-Cu bonding for high density 3D IC realization |
| title_full | Passivation of Cu surface and its application in Cu-Cu bonding for high density 3D IC realization |
| title_fullStr | Passivation of Cu surface and its application in Cu-Cu bonding for high density 3D IC realization |
| title_full_unstemmed | Passivation of Cu surface and its application in Cu-Cu bonding for high density 3D IC realization |
| title_short | Passivation of Cu surface and its application in Cu-Cu bonding for high density 3D IC realization |
| title_sort | passivation of cu surface and its application in cu cu bonding for high density 3d ic realization |
| url | https://hdl.handle.net/10356/99123 http://hdl.handle.net/10220/12805 |
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