Nanostructure effect of V2O5 buffer layer on performance of polymer-fullerene devices
Nanostructure of solar cell materials is often essential for the device performance. V2O5 nanobelt structure is synthesized with a solution process and further used as an anode buffer layer in polymer solar cells, resulting insignificantly improved power conversion efficiency (PCE of 2.71%) much hig...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/99234 http://hdl.handle.net/10220/17175 |
| _version_ | 1811684588469092352 |
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| author | Gong, Cheng Yang, Hongbin Song, Qun Liang Li, Chang Ming |
| author2 | School of Chemical and Biomedical Engineering |
| author_facet | School of Chemical and Biomedical Engineering Gong, Cheng Yang, Hongbin Song, Qun Liang Li, Chang Ming |
| author_sort | Gong, Cheng |
| collection | NTU |
| description | Nanostructure of solar cell materials is often essential for the device performance. V2O5 nanobelt structure is synthesized with a solution process and further used as an anode buffer layer in polymer solar cells, resulting insignificantly improved power conversion efficiency (PCE of 2.71%) much higher than that of devices without the buffer layer (PCE of 0.14%) or with V2O5 powder as the buffer layer (1.08%). X-ray diffraction (XRD) results indicate that the V2O5 nanobelt structure has better phase separation while providing higher surface area for the P3HT:PCBM active layer to enhance photocurrent. The measured impedance spectrums show that the V2O5 nanobelt structure has faster charge transport than the powder material. This work clearly demonstrates that V2O5 nanobelt has great potential as a substitute of the conventionally used PEDOT-PSS buffer layer for high performance devices. |
| first_indexed | 2024-10-01T04:31:01Z |
| format | Journal Article |
| id | ntu-10356/99234 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:31:01Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/992342020-03-07T11:35:26Z Nanostructure effect of V2O5 buffer layer on performance of polymer-fullerene devices Gong, Cheng Yang, Hongbin Song, Qun Liang Li, Chang Ming School of Chemical and Biomedical Engineering Centre for Advanced Bionanosystems DRNTU::Engineering::Chemical engineering Nanostructure of solar cell materials is often essential for the device performance. V2O5 nanobelt structure is synthesized with a solution process and further used as an anode buffer layer in polymer solar cells, resulting insignificantly improved power conversion efficiency (PCE of 2.71%) much higher than that of devices without the buffer layer (PCE of 0.14%) or with V2O5 powder as the buffer layer (1.08%). X-ray diffraction (XRD) results indicate that the V2O5 nanobelt structure has better phase separation while providing higher surface area for the P3HT:PCBM active layer to enhance photocurrent. The measured impedance spectrums show that the V2O5 nanobelt structure has faster charge transport than the powder material. This work clearly demonstrates that V2O5 nanobelt has great potential as a substitute of the conventionally used PEDOT-PSS buffer layer for high performance devices. 2013-10-31T08:43:48Z 2019-12-06T20:04:55Z 2013-10-31T08:43:48Z 2019-12-06T20:04:55Z 2011 2011 Journal Article Gong, C., Yang, H. B., Song, Q. L., & Li, C. M. (2011). Nanostructure effect of V2O5 buffer layer on performance of polymer-fullerene devices. Organic electronics, 13(1), 7-12. 1566-1199 https://hdl.handle.net/10356/99234 http://hdl.handle.net/10220/17175 10.1016/j.orgel.2011.10.006 en Organic electronics |
| spellingShingle | DRNTU::Engineering::Chemical engineering Gong, Cheng Yang, Hongbin Song, Qun Liang Li, Chang Ming Nanostructure effect of V2O5 buffer layer on performance of polymer-fullerene devices |
| title | Nanostructure effect of V2O5 buffer layer on performance of polymer-fullerene devices |
| title_full | Nanostructure effect of V2O5 buffer layer on performance of polymer-fullerene devices |
| title_fullStr | Nanostructure effect of V2O5 buffer layer on performance of polymer-fullerene devices |
| title_full_unstemmed | Nanostructure effect of V2O5 buffer layer on performance of polymer-fullerene devices |
| title_short | Nanostructure effect of V2O5 buffer layer on performance of polymer-fullerene devices |
| title_sort | nanostructure effect of v2o5 buffer layer on performance of polymer fullerene devices |
| topic | DRNTU::Engineering::Chemical engineering |
| url | https://hdl.handle.net/10356/99234 http://hdl.handle.net/10220/17175 |
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