Integration of low-κ dielectric liner in through silicon via and thermomechanical stress relief
Through silicon via (TSV) consists of a copper (Cu) core isolated by a dielectric liner. The thermomechanical stress originating from the mismatch in the coefficient of thermal expansion of Cu and silicon is a serious concern on mechanical reliability and electrical variability. The effect on thermo...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/99278 http://hdl.handle.net/10220/12600 |
| Summary: | Through silicon via (TSV) consists of a copper (Cu) core isolated by a dielectric liner. The thermomechanical stress originating from the mismatch in the coefficient of thermal expansion of Cu and silicon is a serious concern on mechanical reliability and electrical variability. The effect on thermomechanical stress by replacing the conventional liner (silicon dioxide) with a low-κ liner (carbon-doped silicon dioxide) is studied. By micro-Raman analysis, it is observed that the biaxial stress in silicon at the immediate vicinity of Cu-TSV is relieved by 29–45% with a low-κ liner due to its smaller elastic modulus. |
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