Integration of low-κ dielectric liner in through silicon via and thermomechanical stress relief
Through silicon via (TSV) consists of a copper (Cu) core isolated by a dielectric liner. The thermomechanical stress originating from the mismatch in the coefficient of thermal expansion of Cu and silicon is a serious concern on mechanical reliability and electrical variability. The effect on thermo...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/99278 http://hdl.handle.net/10220/12600 |
| _version_ | 1826113841168121856 |
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| author | Ghosh, Kaushik Zhang, Jiye Zhang, Lin Dong, Yuanwei Li, Hong Yu Tan, Cher Ming Xia, Guangrui Tan, Chuan Seng |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Ghosh, Kaushik Zhang, Jiye Zhang, Lin Dong, Yuanwei Li, Hong Yu Tan, Cher Ming Xia, Guangrui Tan, Chuan Seng |
| author_sort | Ghosh, Kaushik |
| collection | NTU |
| description | Through silicon via (TSV) consists of a copper (Cu) core isolated by a dielectric liner. The thermomechanical stress originating from the mismatch in the coefficient of thermal expansion of Cu and silicon is a serious concern on mechanical reliability and electrical variability. The effect on thermomechanical stress by replacing the conventional liner (silicon dioxide) with a low-κ liner (carbon-doped silicon dioxide) is studied. By micro-Raman analysis, it is observed that the biaxial stress in silicon at the immediate vicinity of Cu-TSV is relieved by 29–45% with a low-κ liner due to its smaller elastic modulus. |
| first_indexed | 2024-10-01T03:29:49Z |
| format | Journal Article |
| id | ntu-10356/99278 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:29:49Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/992782020-03-07T14:02:35Z Integration of low-κ dielectric liner in through silicon via and thermomechanical stress relief Ghosh, Kaushik Zhang, Jiye Zhang, Lin Dong, Yuanwei Li, Hong Yu Tan, Cher Ming Xia, Guangrui Tan, Chuan Seng School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Through silicon via (TSV) consists of a copper (Cu) core isolated by a dielectric liner. The thermomechanical stress originating from the mismatch in the coefficient of thermal expansion of Cu and silicon is a serious concern on mechanical reliability and electrical variability. The effect on thermomechanical stress by replacing the conventional liner (silicon dioxide) with a low-κ liner (carbon-doped silicon dioxide) is studied. By micro-Raman analysis, it is observed that the biaxial stress in silicon at the immediate vicinity of Cu-TSV is relieved by 29–45% with a low-κ liner due to its smaller elastic modulus. 2013-07-31T04:34:07Z 2019-12-06T20:05:19Z 2013-07-31T04:34:07Z 2019-12-06T20:05:19Z 2012 2012 Journal Article Ghosh, K., Zhang, J., Zhang, L., Dong, Y., Li, H., Tan, C. M., Xia, G.,& Tan, C. S. (2012). Integration of Low-κ Dielectric Liner in Through Silicon Via and Thermomechanical Stress Relief. Applied Physics Express, 5(12), 126601-. https://hdl.handle.net/10356/99278 http://hdl.handle.net/10220/12600 10.1143/APEX.5.126601 en Applied physics express © 2012 The Japan Society of Applied Physics (JSAP). |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Ghosh, Kaushik Zhang, Jiye Zhang, Lin Dong, Yuanwei Li, Hong Yu Tan, Cher Ming Xia, Guangrui Tan, Chuan Seng Integration of low-κ dielectric liner in through silicon via and thermomechanical stress relief |
| title | Integration of low-κ dielectric liner in through silicon via and thermomechanical stress relief |
| title_full | Integration of low-κ dielectric liner in through silicon via and thermomechanical stress relief |
| title_fullStr | Integration of low-κ dielectric liner in through silicon via and thermomechanical stress relief |
| title_full_unstemmed | Integration of low-κ dielectric liner in through silicon via and thermomechanical stress relief |
| title_short | Integration of low-κ dielectric liner in through silicon via and thermomechanical stress relief |
| title_sort | integration of low κ dielectric liner in through silicon via and thermomechanical stress relief |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/99278 http://hdl.handle.net/10220/12600 |
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