Integration of low-κ dielectric liner in through silicon via and thermomechanical stress relief

Integration of low-κ dielectric liner in through silicon via and thermomechanical stress relief

Through silicon via (TSV) consists of a copper (Cu) core isolated by a dielectric liner. The thermomechanical stress originating from the mismatch in the coefficient of thermal expansion of Cu and silicon is a serious concern on mechanical reliability and electrical variability. The effect on thermo...

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Bibliographic Details
Main Authors: Ghosh, Kaushik, Zhang, Jiye, Zhang, Lin, Dong, Yuanwei, Li, Hong Yu, Tan, Cher Ming, Xia, Guangrui, Tan, Chuan Seng
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/99278
http://hdl.handle.net/10220/12600

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