Electrical field dependent mobility analysis of ultralong individual single walled carbon nanotube field-effect transistor
Ethanol based chemical vapour deposition (CVD) was used to grow clean individual ultralong single walled carbon nanotubes (SWCNTs) and fabricated as carbon nanotube field-effect transistors (CNTFETs). Here, the two kinds of mobility-effective physical mobility and conventional field-effect mobility...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2014
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| Online Access: | https://hdl.handle.net/10356/99284 http://hdl.handle.net/10220/24047 |
| _version_ | 1811684588683001856 |
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| author | Krishna, S. V. Hari An, Jianing Zheng, Lianxi |
| author2 | School of Mechanical and Aerospace Engineering |
| author_facet | School of Mechanical and Aerospace Engineering Krishna, S. V. Hari An, Jianing Zheng, Lianxi |
| author_sort | Krishna, S. V. Hari |
| collection | NTU |
| description | Ethanol based chemical vapour deposition (CVD) was used to grow clean individual ultralong single walled carbon nanotubes (SWCNTs) and fabricated as carbon nanotube field-effect transistors (CNTFETs). Here, the two kinds of mobility-effective physical mobility and conventional field-effect mobility were investigated using classical diffusive metal-oxide-semiconductor field-effect transistor (MOSFET) model and their ratios were analysed in the strong inversion region and the near-threshold region as a function of the vertical gate bias and horizontal drain bias. The fabricated CNTFETs showed intrinsic mobilities as high as 105 cm2 V–1 s–1 and device mobility greater than 104 cm2 V–1 s–1 consistently at room temperature 300 K. In the linear regime, the ratio of both the above mobilities obtained for a number of devices in the strong inversion and near–threshold region were around to have mean values of 2.34 and 10.18 respectively. The transport is diffusive and scattering dominated, which could pave way for mobility based nanosensing for future applications. |
| first_indexed | 2024-10-01T04:31:01Z |
| format | Journal Article |
| id | ntu-10356/99284 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:31:01Z |
| publishDate | 2014 |
| record_format | dspace |
| spelling | ntu-10356/992842020-03-07T13:19:27Z Electrical field dependent mobility analysis of ultralong individual single walled carbon nanotube field-effect transistor Krishna, S. V. Hari An, Jianing Zheng, Lianxi School of Mechanical and Aerospace Engineering DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics Ethanol based chemical vapour deposition (CVD) was used to grow clean individual ultralong single walled carbon nanotubes (SWCNTs) and fabricated as carbon nanotube field-effect transistors (CNTFETs). Here, the two kinds of mobility-effective physical mobility and conventional field-effect mobility were investigated using classical diffusive metal-oxide-semiconductor field-effect transistor (MOSFET) model and their ratios were analysed in the strong inversion region and the near-threshold region as a function of the vertical gate bias and horizontal drain bias. The fabricated CNTFETs showed intrinsic mobilities as high as 105 cm2 V–1 s–1 and device mobility greater than 104 cm2 V–1 s–1 consistently at room temperature 300 K. In the linear regime, the ratio of both the above mobilities obtained for a number of devices in the strong inversion and near–threshold region were around to have mean values of 2.34 and 10.18 respectively. The transport is diffusive and scattering dominated, which could pave way for mobility based nanosensing for future applications. 2014-10-15T08:05:38Z 2019-12-06T20:05:23Z 2014-10-15T08:05:38Z 2019-12-06T20:05:23Z 2013 2013 Journal Article Krishna, S. V. H., An, J., & Zheng, L. (2013). Electrical field dependent mobility analysis of ultralong individual single walled carbon nanotube field-effect transistor. Journal of nanoelectronics and optoelectronics, 8(2), 202-207. https://hdl.handle.net/10356/99284 http://hdl.handle.net/10220/24047 10.1166/jno.2013.1455 en Journal of nanoelectronics and optoelectronics © 2013 American Scientific Publishers. |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics Krishna, S. V. Hari An, Jianing Zheng, Lianxi Electrical field dependent mobility analysis of ultralong individual single walled carbon nanotube field-effect transistor |
| title | Electrical field dependent mobility analysis of ultralong individual single walled carbon nanotube field-effect transistor |
| title_full | Electrical field dependent mobility analysis of ultralong individual single walled carbon nanotube field-effect transistor |
| title_fullStr | Electrical field dependent mobility analysis of ultralong individual single walled carbon nanotube field-effect transistor |
| title_full_unstemmed | Electrical field dependent mobility analysis of ultralong individual single walled carbon nanotube field-effect transistor |
| title_short | Electrical field dependent mobility analysis of ultralong individual single walled carbon nanotube field-effect transistor |
| title_sort | electrical field dependent mobility analysis of ultralong individual single walled carbon nanotube field effect transistor |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics |
| url | https://hdl.handle.net/10356/99284 http://hdl.handle.net/10220/24047 |
| work_keys_str_mv | AT krishnasvhari electricalfielddependentmobilityanalysisofultralongindividualsinglewalledcarbonnanotubefieldeffecttransistor AT anjianing electricalfielddependentmobilityanalysisofultralongindividualsinglewalledcarbonnanotubefieldeffecttransistor AT zhenglianxi electricalfielddependentmobilityanalysisofultralongindividualsinglewalledcarbonnanotubefieldeffecttransistor |