Comparison of stress-induced voiding phenomena in copper line–via structures with different dielectric materials
The package level stress-induced voiding (SIV) test of Cu dual-damascene line–via structures is performed. Two different dielectrics, undoped silica glass (USG) and carbon doped oxide (CDO), are used in this work. After 1344 h of high temperature storage test, the resistance drift of USG interconnec...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/99378 http://hdl.handle.net/10220/17633 |