Design, modeling and simulation of an anchorless nano-electro- mechanical nonvolatile memory
Non Volatile Memories (NVMs) based on a storage layer, like FLASH, suffer from poor retention at high temperature, high voltage writing, and wear out while cycling. This paper presents the structure, operation and modeling details of a new NVM based on nano-electromechanical memory (NEM) cell having...
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| Format: | Conference Paper |
| Language: | English |
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2013
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| Online Access: | https://hdl.handle.net/10356/99444 http://hdl.handle.net/10220/18366 http://www.ipcsit.com/proceeding.htm |
| _version_ | 1811680535267770368 |
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| author | Vaddi, Ramesh Pott, Vincent Lin, Julius Tsai Ming Kim, Tony Tae-Hyoung |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Vaddi, Ramesh Pott, Vincent Lin, Julius Tsai Ming Kim, Tony Tae-Hyoung |
| author_sort | Vaddi, Ramesh |
| collection | NTU |
| description | Non Volatile Memories (NVMs) based on a storage layer, like FLASH, suffer from poor retention at high temperature, high voltage writing, and wear out while cycling. This paper presents the structure, operation and modeling details of a new NVM based on nano-electromechanical memory (NEM) cell having two stable mechanical positions and actuated by electrostatic forces. Permanent retention is obtained by adhesion forces only, eliminating the leakage observed in all types of storage layers. First part of the work focus on the introduction of single cell of NEM based NVM structure and operation. The second part of the work focus on NEM based NVM modeling and behavior implementation with Verilog-A compact modeling and testing in Cadence environment. The results verify the correct functionality and scalability of the new NEM cell. With the anchorless shuttle, the design is highly eased and scalable, compared to standard anchor based NEM structures. |
| first_indexed | 2024-10-01T03:26:36Z |
| format | Conference Paper |
| id | ntu-10356/99444 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:26:36Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/994442019-12-06T20:07:25Z Design, modeling and simulation of an anchorless nano-electro- mechanical nonvolatile memory Vaddi, Ramesh Pott, Vincent Lin, Julius Tsai Ming Kim, Tony Tae-Hyoung School of Electrical and Electronic Engineering International Conference on Solid-State and Integrated Circuit (2012 : Xi'an, China) DRNTU::Engineering::Electrical and electronic engineering::Microelectromechanical systems Non Volatile Memories (NVMs) based on a storage layer, like FLASH, suffer from poor retention at high temperature, high voltage writing, and wear out while cycling. This paper presents the structure, operation and modeling details of a new NVM based on nano-electromechanical memory (NEM) cell having two stable mechanical positions and actuated by electrostatic forces. Permanent retention is obtained by adhesion forces only, eliminating the leakage observed in all types of storage layers. First part of the work focus on the introduction of single cell of NEM based NVM structure and operation. The second part of the work focus on NEM based NVM modeling and behavior implementation with Verilog-A compact modeling and testing in Cadence environment. The results verify the correct functionality and scalability of the new NEM cell. With the anchorless shuttle, the design is highly eased and scalable, compared to standard anchor based NEM structures. Published version 2013-12-31T01:17:00Z 2019-12-06T20:07:25Z 2013-12-31T01:17:00Z 2019-12-06T20:07:25Z 2012 2012 Conference Paper Vaddi, R., Pott, V., Lin, J. T. M., & Kim, T. T. (2012). Design, Modeling and Simulation of an Anchorless Nano-Electro-Mechanical Nonvolatile Memory. 2012 International Conference on Solid-State and Integrated Circuit, 32, pp.12-17. https://hdl.handle.net/10356/99444 http://hdl.handle.net/10220/18366 http://www.ipcsit.com/proceeding.htm en © 2012 IACSIT Press. This paper was published in International Conference on Solid-State and Integrated Circuit (ICSIC 2012) and is made available as an electronic reprint (preprint) with permission of IACSIT Press. The paper can be found at the following official URL: [http://www.ipcsit.com/proceeding.htm]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Microelectromechanical systems Vaddi, Ramesh Pott, Vincent Lin, Julius Tsai Ming Kim, Tony Tae-Hyoung Design, modeling and simulation of an anchorless nano-electro- mechanical nonvolatile memory |
| title | Design, modeling and simulation of an anchorless nano-electro- mechanical nonvolatile memory |
| title_full | Design, modeling and simulation of an anchorless nano-electro- mechanical nonvolatile memory |
| title_fullStr | Design, modeling and simulation of an anchorless nano-electro- mechanical nonvolatile memory |
| title_full_unstemmed | Design, modeling and simulation of an anchorless nano-electro- mechanical nonvolatile memory |
| title_short | Design, modeling and simulation of an anchorless nano-electro- mechanical nonvolatile memory |
| title_sort | design modeling and simulation of an anchorless nano electro mechanical nonvolatile memory |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Microelectromechanical systems |
| url | https://hdl.handle.net/10356/99444 http://hdl.handle.net/10220/18366 http://www.ipcsit.com/proceeding.htm |
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