Design, modeling and simulation of an anchorless nano-electro- mechanical nonvolatile memory

Design, modeling and simulation of an anchorless nano-electro- mechanical nonvolatile memory

Non Volatile Memories (NVMs) based on a storage layer, like FLASH, suffer from poor retention at high temperature, high voltage writing, and wear out while cycling. This paper presents the structure, operation and modeling details of a new NVM based on nano-electromechanical memory (NEM) cell having...

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Bibliographic Details
Main Authors: Vaddi, Ramesh, Pott, Vincent, Lin, Julius Tsai Ming, Kim, Tony Tae-Hyoung
Other Authors: School of Electrical and Electronic Engineering
Format: Conference Paper
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Microelectromechanical systems
Online Access:https://hdl.handle.net/10356/99444
http://hdl.handle.net/10220/18366
http://www.ipcsit.com/proceeding.htm

Internet

https://hdl.handle.net/10356/99444
http://hdl.handle.net/10220/18366
http://www.ipcsit.com/proceeding.htm

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