Design, modeling and simulation of an anchorless nano-electro- mechanical nonvolatile memory
Non Volatile Memories (NVMs) based on a storage layer, like FLASH, suffer from poor retention at high temperature, high voltage writing, and wear out while cycling. This paper presents the structure, operation and modeling details of a new NVM based on nano-electromechanical memory (NEM) cell having...
Main Authors: | Vaddi, Ramesh, Pott, Vincent, Lin, Julius Tsai Ming, Kim, Tony Tae-Hyoung |
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Other Authors: | School of Electrical and Electronic Engineering |
Format: | Conference Paper |
Language: | English |
Published: |
2013
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/99444 http://hdl.handle.net/10220/18366 http://www.ipcsit.com/proceeding.htm |
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