CMOS-compatible ruggedized high-temperature Lamb wave pressure sensor
This paper describes the development of a novel ruggedized high-temperature pressure sensor operating in lateral field exited (LFE) Lamb wave mode. The comb-like structure electrodes on top of aluminum nitride (AlN) were used to generate the wave. A membrane was fabricated on SOI wafer with a 10 µm...
Main Authors: | , , , , , , , |
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Format: | Journal Article |
Language: | English |
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2013
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Online Access: | https://hdl.handle.net/10356/99652 http://hdl.handle.net/10220/17741 |
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author | Kropelnicki, P. Muckensturm, K.-M. Mu, X. J. Randles, A. B. Cai, H. Tsai, J. M. Vogt, H. Ang, Wan Chia |
author2 | Lee Kong Chian School of Medicine (LKCMedicine) |
author_facet | Lee Kong Chian School of Medicine (LKCMedicine) Kropelnicki, P. Muckensturm, K.-M. Mu, X. J. Randles, A. B. Cai, H. Tsai, J. M. Vogt, H. Ang, Wan Chia |
author_sort | Kropelnicki, P. |
collection | NTU |
description | This paper describes the development of a novel ruggedized high-temperature pressure sensor operating in lateral field exited (LFE) Lamb wave mode. The comb-like structure electrodes on top of aluminum nitride (AlN) were used to generate the wave. A membrane was fabricated on SOI wafer with a 10 µm thick device layer. The sensor chip was mounted on a pressure test package and pressure was applied to the backside of the membrane, with a range of 20–100 psi. The temperature coefficient of frequency (TCF) was experimentally measured in the temperature range of −50 °C to 300 °C. By using the modified Butterworth–van Dyke model, coupling coefficients and quality factor were extracted. Temperature-dependent Young's modulus of composite structure was determined using resonance frequency and sensor interdigital transducer (IDT) wavelength which is mainly dominated by an AlN layer. Absolute sensor phase noise was measured at resonance to estimate the sensor pressure and temperature sensitivity. This paper demonstrates an AlN-based pressure sensor which can operate in harsh environment such as oil and gas exploration, automobile and aeronautic applications. |
first_indexed | 2024-10-01T04:27:45Z |
format | Journal Article |
id | ntu-10356/99652 |
institution | Nanyang Technological University |
language | English |
last_indexed | 2024-10-01T04:27:45Z |
publishDate | 2013 |
record_format | dspace |
spelling | ntu-10356/996522020-03-07T12:57:26Z CMOS-compatible ruggedized high-temperature Lamb wave pressure sensor Kropelnicki, P. Muckensturm, K.-M. Mu, X. J. Randles, A. B. Cai, H. Tsai, J. M. Vogt, H. Ang, Wan Chia Lee Kong Chian School of Medicine (LKCMedicine) DRNTU::Engineering::Electrical and electronic engineering This paper describes the development of a novel ruggedized high-temperature pressure sensor operating in lateral field exited (LFE) Lamb wave mode. The comb-like structure electrodes on top of aluminum nitride (AlN) were used to generate the wave. A membrane was fabricated on SOI wafer with a 10 µm thick device layer. The sensor chip was mounted on a pressure test package and pressure was applied to the backside of the membrane, with a range of 20–100 psi. The temperature coefficient of frequency (TCF) was experimentally measured in the temperature range of −50 °C to 300 °C. By using the modified Butterworth–van Dyke model, coupling coefficients and quality factor were extracted. Temperature-dependent Young's modulus of composite structure was determined using resonance frequency and sensor interdigital transducer (IDT) wavelength which is mainly dominated by an AlN layer. Absolute sensor phase noise was measured at resonance to estimate the sensor pressure and temperature sensitivity. This paper demonstrates an AlN-based pressure sensor which can operate in harsh environment such as oil and gas exploration, automobile and aeronautic applications. 2013-11-15T07:53:55Z 2019-12-06T20:09:52Z 2013-11-15T07:53:55Z 2019-12-06T20:09:52Z 2013 2013 Journal Article Kropelnicki, P., Muckensturm, K. M., Mu, X. J., Randles, A. B., Cai, H., Ang, W. C., & et al. (2013). CMOS-compatible ruggedized high-temperature Lamb wave pressure sensor. Journal of micromechanics and microengineering, 23(8), 085018-. https://hdl.handle.net/10356/99652 http://hdl.handle.net/10220/17741 10.1088/0960-1317/23/8/085018 en Journal of micromechanics and microengineering |
spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Kropelnicki, P. Muckensturm, K.-M. Mu, X. J. Randles, A. B. Cai, H. Tsai, J. M. Vogt, H. Ang, Wan Chia CMOS-compatible ruggedized high-temperature Lamb wave pressure sensor |
title | CMOS-compatible ruggedized high-temperature Lamb wave pressure sensor |
title_full | CMOS-compatible ruggedized high-temperature Lamb wave pressure sensor |
title_fullStr | CMOS-compatible ruggedized high-temperature Lamb wave pressure sensor |
title_full_unstemmed | CMOS-compatible ruggedized high-temperature Lamb wave pressure sensor |
title_short | CMOS-compatible ruggedized high-temperature Lamb wave pressure sensor |
title_sort | cmos compatible ruggedized high temperature lamb wave pressure sensor |
topic | DRNTU::Engineering::Electrical and electronic engineering |
url | https://hdl.handle.net/10356/99652 http://hdl.handle.net/10220/17741 |
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