CMOS-compatible ruggedized high-temperature Lamb wave pressure sensor

CMOS-compatible ruggedized high-temperature Lamb wave pressure sensor

This paper describes the development of a novel ruggedized high-temperature pressure sensor operating in lateral field exited (LFE) Lamb wave mode. The comb-like structure electrodes on top of aluminum nitride (AlN) were used to generate the wave. A membrane was fabricated on SOI wafer with a 10 µm...

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Bibliographic Details
Main Authors: Kropelnicki, P., Muckensturm, K.-M., Mu, X. J., Randles, A. B., Cai, H., Tsai, J. M., Vogt, H., Ang, Wan Chia
Other Authors: Lee Kong Chian School of Medicine (LKCMedicine)
Format: Journal Article
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/99652
http://hdl.handle.net/10220/17741

Internet

https://hdl.handle.net/10356/99652
http://hdl.handle.net/10220/17741

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