Epitaxial BiFeO3 multiferroic thin film heterostructures
Enhancement of polarization and related properties in heteroepitaxially constrained thin films of the ferroelectromagnet, BiFeO3 is reported. Structure analysis indicates that the crystal structure is monoclinic in contrast to bulk, which is rhombohedral. The films display a room-temperature spontan...
| Main Authors: | , , , , , , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
| Published: |
2011
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| Online Access: | https://hdl.handle.net/10356/99744 http://hdl.handle.net/10220/7391 |
| _version_ | 1826127177882533888 |
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| author | Wang, J. Neaton, J. B. Zheng, H. Nagarajan, V. Ogale, S. B. Liu, B. Viehland, D. Schlom, D. G. Waghmare, U. V. Spaldin, N. A. Rabe, K. M. Wuttig, M. Ramesh, R. |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Wang, J. Neaton, J. B. Zheng, H. Nagarajan, V. Ogale, S. B. Liu, B. Viehland, D. Schlom, D. G. Waghmare, U. V. Spaldin, N. A. Rabe, K. M. Wuttig, M. Ramesh, R. |
| author_sort | Wang, J. |
| collection | NTU |
| description | Enhancement of polarization and related properties in heteroepitaxially constrained thin films of the ferroelectromagnet, BiFeO3 is reported. Structure analysis indicates that the crystal structure is monoclinic in contrast to bulk, which is rhombohedral. The films display a room-temperature spontaneous polarization (50-60μC/cm2) almost an order of magnitude higher than that of the bulk (6.1μC/cm2). The observed enhancement is corroborated by first-principles calculations and found to originate from large relative displacements of the Bi, Fe, and O sublattices. The films also exhibit enhanced thickness-dependent magnetism compared with the bulk. These enhanced and combined functional responses in thin film form present an exciting opportunity to create and implement novel thin film devices that actively couple the magnetic and ferroelectric order parameters. |
| first_indexed | 2024-10-01T07:04:31Z |
| format | Journal Article |
| id | ntu-10356/99744 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:04:31Z |
| publishDate | 2011 |
| record_format | dspace |
| spelling | ntu-10356/997442023-07-14T15:54:52Z Epitaxial BiFeO3 multiferroic thin film heterostructures Wang, J. Neaton, J. B. Zheng, H. Nagarajan, V. Ogale, S. B. Liu, B. Viehland, D. Schlom, D. G. Waghmare, U. V. Spaldin, N. A. Rabe, K. M. Wuttig, M. Ramesh, R. School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Enhancement of polarization and related properties in heteroepitaxially constrained thin films of the ferroelectromagnet, BiFeO3 is reported. Structure analysis indicates that the crystal structure is monoclinic in contrast to bulk, which is rhombohedral. The films display a room-temperature spontaneous polarization (50-60μC/cm2) almost an order of magnitude higher than that of the bulk (6.1μC/cm2). The observed enhancement is corroborated by first-principles calculations and found to originate from large relative displacements of the Bi, Fe, and O sublattices. The films also exhibit enhanced thickness-dependent magnetism compared with the bulk. These enhanced and combined functional responses in thin film form present an exciting opportunity to create and implement novel thin film devices that actively couple the magnetic and ferroelectric order parameters. Accepted version 2011-12-13T03:29:39Z 2019-12-06T20:10:57Z 2011-12-13T03:29:39Z 2019-12-06T20:10:57Z 2003 2003 Journal Article Wang, J., Neaton, J. B., Zheng, H., Nagarajan, V., Ogale, S. B., Liu, B., & et al. (2003). Epitaxial BiFeO3 Multiferroic Thin Film Heterostructures. Science, 299(5613), 1719-1722. https://hdl.handle.net/10356/99744 http://hdl.handle.net/10220/7391 10.1126/science.1080615 en Science © 2003 American Association for the Advancement of Science This is the author created version of a work that has been peer reviewed and accepted for publication by Science, American Association for the Advancement of Science. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: http://dx.doi.org/10.1126/science.1080615 application/pdf |
| spellingShingle | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Wang, J. Neaton, J. B. Zheng, H. Nagarajan, V. Ogale, S. B. Liu, B. Viehland, D. Schlom, D. G. Waghmare, U. V. Spaldin, N. A. Rabe, K. M. Wuttig, M. Ramesh, R. Epitaxial BiFeO3 multiferroic thin film heterostructures |
| title | Epitaxial BiFeO3 multiferroic thin film heterostructures |
| title_full | Epitaxial BiFeO3 multiferroic thin film heterostructures |
| title_fullStr | Epitaxial BiFeO3 multiferroic thin film heterostructures |
| title_full_unstemmed | Epitaxial BiFeO3 multiferroic thin film heterostructures |
| title_short | Epitaxial BiFeO3 multiferroic thin film heterostructures |
| title_sort | epitaxial bifeo3 multiferroic thin film heterostructures |
| topic | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films |
| url | https://hdl.handle.net/10356/99744 http://hdl.handle.net/10220/7391 |
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