Quantum dot light-emitting diode with quantum dots inside the hole transporting layers
We report a hybrid, quantum dot (QD)-based, organic light-emitting diode architecture using a noninverted structure with the QDs sandwiched between hole transporting layers (HTLs) outperforming the reference device structure implemented in conventional noninverted architecture by over five folds and...
| Main Authors: | , , , , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/99823 http://hdl.handle.net/10220/17230 |
| _version_ | 1811691393070923776 |
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| author | Leck, Kheng Swee Divayana, Yoga Zhao, Dewei Yang, Xuyong Abiyasa, Agus Putu Mutlugun, Evren Gao, Yuan Liu, Shuwei Tan, Swee Tiam Sun, Xiaowei Demir, Hilmi Volkan |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Leck, Kheng Swee Divayana, Yoga Zhao, Dewei Yang, Xuyong Abiyasa, Agus Putu Mutlugun, Evren Gao, Yuan Liu, Shuwei Tan, Swee Tiam Sun, Xiaowei Demir, Hilmi Volkan |
| author_sort | Leck, Kheng Swee |
| collection | NTU |
| description | We report a hybrid, quantum dot (QD)-based, organic light-emitting diode architecture using a noninverted structure with the QDs sandwiched between hole transporting layers (HTLs) outperforming the reference device structure implemented in conventional noninverted architecture by over five folds and suppressing the blue emission that is otherwise observed in the conventional structure because of the excess electrons leaking towards the HTL. It is predicted in the new device structure that 97.44% of the exciton formation takes place in the QD layer, while 2.56% of the excitons form in the HTL. It is found that the enhancement in the external quantum efficiency is mainly due to the stronger confinement of exciton formation to the QDs. |
| first_indexed | 2024-10-01T06:19:10Z |
| format | Journal Article |
| id | ntu-10356/99823 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:19:10Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/998232020-03-07T14:00:31Z Quantum dot light-emitting diode with quantum dots inside the hole transporting layers Leck, Kheng Swee Divayana, Yoga Zhao, Dewei Yang, Xuyong Abiyasa, Agus Putu Mutlugun, Evren Gao, Yuan Liu, Shuwei Tan, Swee Tiam Sun, Xiaowei Demir, Hilmi Volkan School of Electrical and Electronic Engineering School of Physical and Mathematical Sciences DRNTU::Engineering::Electrical and electronic engineering We report a hybrid, quantum dot (QD)-based, organic light-emitting diode architecture using a noninverted structure with the QDs sandwiched between hole transporting layers (HTLs) outperforming the reference device structure implemented in conventional noninverted architecture by over five folds and suppressing the blue emission that is otherwise observed in the conventional structure because of the excess electrons leaking towards the HTL. It is predicted in the new device structure that 97.44% of the exciton formation takes place in the QD layer, while 2.56% of the excitons form in the HTL. It is found that the enhancement in the external quantum efficiency is mainly due to the stronger confinement of exciton formation to the QDs. 2013-11-05T03:06:33Z 2019-12-06T20:12:03Z 2013-11-05T03:06:33Z 2019-12-06T20:12:03Z 2013 2013 Journal Article Leck, K. S., Divayana, Y., Zhao, D., Yang, X., Abiyasa, A. P., Mutlugun, E., et al. (2013). Quantum dot light-emitting diode with quantum dots inside the hole transporting layers. ACS Applied materials & interfaces, 5(14), 6535-6540. https://hdl.handle.net/10356/99823 http://hdl.handle.net/10220/17230 10.1021/am400903c en ACS applied materials & interfaces |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Leck, Kheng Swee Divayana, Yoga Zhao, Dewei Yang, Xuyong Abiyasa, Agus Putu Mutlugun, Evren Gao, Yuan Liu, Shuwei Tan, Swee Tiam Sun, Xiaowei Demir, Hilmi Volkan Quantum dot light-emitting diode with quantum dots inside the hole transporting layers |
| title | Quantum dot light-emitting diode with quantum dots inside the hole transporting layers |
| title_full | Quantum dot light-emitting diode with quantum dots inside the hole transporting layers |
| title_fullStr | Quantum dot light-emitting diode with quantum dots inside the hole transporting layers |
| title_full_unstemmed | Quantum dot light-emitting diode with quantum dots inside the hole transporting layers |
| title_short | Quantum dot light-emitting diode with quantum dots inside the hole transporting layers |
| title_sort | quantum dot light emitting diode with quantum dots inside the hole transporting layers |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/99823 http://hdl.handle.net/10220/17230 |
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