A general lithography-free method of micro/nanoscale fabrication and patterning on Si and Ge surfaces

Here, we introduce and give an overview of a general lithography-free method to fabricate silicide and germanide micro-/nanostructures on Si and Ge surfaces through metal-vapor-initiated endoepitaxial growth. Excellent controls on shape and orientation are achieved by adjusting the substrate orienta...

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Main Authors: Wang, Huatao, Wu, Tom
Other Authors: School of Physical and Mathematical Sciences
Format: Journal Article
Language:English
Published: 2013
Online Access:https://hdl.handle.net/10356/99875
http://hdl.handle.net/10220/9189
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author Wang, Huatao
Wu, Tom
author2 School of Physical and Mathematical Sciences
author_facet School of Physical and Mathematical Sciences
Wang, Huatao
Wu, Tom
author_sort Wang, Huatao
collection NTU
description Here, we introduce and give an overview of a general lithography-free method to fabricate silicide and germanide micro-/nanostructures on Si and Ge surfaces through metal-vapor-initiated endoepitaxial growth. Excellent controls on shape and orientation are achieved by adjusting the substrate orientation and growth parameters. Furthermore, micro-/nanoscale pits with controlled morphologies can also be successfully fabricated on Si and Ge surfaces by taking advantage of the sublimation of silicides/germanides. The aim of this brief report is to illustrate the concept of lithography-free synthesis and patterning on surfaces of elemental semiconductors, and the differences and the challenges associated with the Si and the Ge surfaces will be discussed. Our results suggest that this low-cost bottom-up approach is promising for applications in functional nanodevices.
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spelling ntu-10356/998752023-02-28T19:41:50Z A general lithography-free method of micro/nanoscale fabrication and patterning on Si and Ge surfaces Wang, Huatao Wu, Tom School of Physical and Mathematical Sciences Here, we introduce and give an overview of a general lithography-free method to fabricate silicide and germanide micro-/nanostructures on Si and Ge surfaces through metal-vapor-initiated endoepitaxial growth. Excellent controls on shape and orientation are achieved by adjusting the substrate orientation and growth parameters. Furthermore, micro-/nanoscale pits with controlled morphologies can also be successfully fabricated on Si and Ge surfaces by taking advantage of the sublimation of silicides/germanides. The aim of this brief report is to illustrate the concept of lithography-free synthesis and patterning on surfaces of elemental semiconductors, and the differences and the challenges associated with the Si and the Ge surfaces will be discussed. Our results suggest that this low-cost bottom-up approach is promising for applications in functional nanodevices. Published version 2013-02-20T05:41:19Z 2019-12-06T20:12:45Z 2013-02-20T05:41:19Z 2019-12-06T20:12:45Z 2012 2012 Journal Article Wang, H., & Wu, T. (2012). A general lithography-free method of micro/nanoscale fabrication and patterning on Si and Ge surfaces. Nanoscale Research Letters, 7(1), 110. 1556-276X https://hdl.handle.net/10356/99875 http://hdl.handle.net/10220/9189 10.1186/1556-276X-7-110 22315969 en Nanoscale research letters © 2012 The Authors. application/pdf
spellingShingle Wang, Huatao
Wu, Tom
A general lithography-free method of micro/nanoscale fabrication and patterning on Si and Ge surfaces
title A general lithography-free method of micro/nanoscale fabrication and patterning on Si and Ge surfaces
title_full A general lithography-free method of micro/nanoscale fabrication and patterning on Si and Ge surfaces
title_fullStr A general lithography-free method of micro/nanoscale fabrication and patterning on Si and Ge surfaces
title_full_unstemmed A general lithography-free method of micro/nanoscale fabrication and patterning on Si and Ge surfaces
title_short A general lithography-free method of micro/nanoscale fabrication and patterning on Si and Ge surfaces
title_sort general lithography free method of micro nanoscale fabrication and patterning on si and ge surfaces
url https://hdl.handle.net/10356/99875
http://hdl.handle.net/10220/9189
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