A general lithography-free method of micro/nanoscale fabrication and patterning on Si and Ge surfaces
Here, we introduce and give an overview of a general lithography-free method to fabricate silicide and germanide micro-/nanostructures on Si and Ge surfaces through metal-vapor-initiated endoepitaxial growth. Excellent controls on shape and orientation are achieved by adjusting the substrate orienta...
Main Authors: | , |
---|---|
Other Authors: | |
Format: | Journal Article |
Language: | English |
Published: |
2013
|
Online Access: | https://hdl.handle.net/10356/99875 http://hdl.handle.net/10220/9189 |
_version_ | 1826128785723883520 |
---|---|
author | Wang, Huatao Wu, Tom |
author2 | School of Physical and Mathematical Sciences |
author_facet | School of Physical and Mathematical Sciences Wang, Huatao Wu, Tom |
author_sort | Wang, Huatao |
collection | NTU |
description | Here, we introduce and give an overview of a general lithography-free method to fabricate silicide and germanide micro-/nanostructures on Si and Ge surfaces through metal-vapor-initiated endoepitaxial growth. Excellent controls on shape and orientation are achieved by adjusting the substrate orientation and growth parameters. Furthermore, micro-/nanoscale pits with controlled morphologies can also be successfully fabricated on Si and Ge surfaces by taking advantage of the sublimation of silicides/germanides. The aim of this brief report is to illustrate the concept of lithography-free synthesis and patterning on surfaces of elemental semiconductors, and the differences and the challenges associated with the Si and the Ge surfaces will be discussed. Our results suggest that this low-cost bottom-up approach is promising for applications in functional nanodevices. |
first_indexed | 2024-10-01T07:30:15Z |
format | Journal Article |
id | ntu-10356/99875 |
institution | Nanyang Technological University |
language | English |
last_indexed | 2024-10-01T07:30:15Z |
publishDate | 2013 |
record_format | dspace |
spelling | ntu-10356/998752023-02-28T19:41:50Z A general lithography-free method of micro/nanoscale fabrication and patterning on Si and Ge surfaces Wang, Huatao Wu, Tom School of Physical and Mathematical Sciences Here, we introduce and give an overview of a general lithography-free method to fabricate silicide and germanide micro-/nanostructures on Si and Ge surfaces through metal-vapor-initiated endoepitaxial growth. Excellent controls on shape and orientation are achieved by adjusting the substrate orientation and growth parameters. Furthermore, micro-/nanoscale pits with controlled morphologies can also be successfully fabricated on Si and Ge surfaces by taking advantage of the sublimation of silicides/germanides. The aim of this brief report is to illustrate the concept of lithography-free synthesis and patterning on surfaces of elemental semiconductors, and the differences and the challenges associated with the Si and the Ge surfaces will be discussed. Our results suggest that this low-cost bottom-up approach is promising for applications in functional nanodevices. Published version 2013-02-20T05:41:19Z 2019-12-06T20:12:45Z 2013-02-20T05:41:19Z 2019-12-06T20:12:45Z 2012 2012 Journal Article Wang, H., & Wu, T. (2012). A general lithography-free method of micro/nanoscale fabrication and patterning on Si and Ge surfaces. Nanoscale Research Letters, 7(1), 110. 1556-276X https://hdl.handle.net/10356/99875 http://hdl.handle.net/10220/9189 10.1186/1556-276X-7-110 22315969 en Nanoscale research letters © 2012 The Authors. application/pdf |
spellingShingle | Wang, Huatao Wu, Tom A general lithography-free method of micro/nanoscale fabrication and patterning on Si and Ge surfaces |
title | A general lithography-free method of micro/nanoscale fabrication and patterning on Si and Ge surfaces |
title_full | A general lithography-free method of micro/nanoscale fabrication and patterning on Si and Ge surfaces |
title_fullStr | A general lithography-free method of micro/nanoscale fabrication and patterning on Si and Ge surfaces |
title_full_unstemmed | A general lithography-free method of micro/nanoscale fabrication and patterning on Si and Ge surfaces |
title_short | A general lithography-free method of micro/nanoscale fabrication and patterning on Si and Ge surfaces |
title_sort | general lithography free method of micro nanoscale fabrication and patterning on si and ge surfaces |
url | https://hdl.handle.net/10356/99875 http://hdl.handle.net/10220/9189 |
work_keys_str_mv | AT wanghuatao agenerallithographyfreemethodofmicronanoscalefabricationandpatterningonsiandgesurfaces AT wutom agenerallithographyfreemethodofmicronanoscalefabricationandpatterningonsiandgesurfaces AT wanghuatao generallithographyfreemethodofmicronanoscalefabricationandpatterningonsiandgesurfaces AT wutom generallithographyfreemethodofmicronanoscalefabricationandpatterningonsiandgesurfaces |