A simple 3,4-ethylenedioxythiophene based hole-transporting material for perovskite solar cells
We report a novel electron-rich molecule based on 3,4-ethylenedioxythiophene (H101). When used as the hole-transporting layer in a perovskite-based solar cell, the power-conversion efficiency reached 13.8 % under AM 1.5G solar simulation. This result is comparable with that obtained using the well-k...
| Հիմնական հեղինակներ: | , , , , , |
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| Այլ հեղինակներ: | |
| Ձևաչափ: | Journal Article |
| Լեզու: | English |
| Հրապարակվել է: |
2014
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| Խորագրեր: | |
| Առցանց հասանելիություն: | https://hdl.handle.net/10356/99894 http://hdl.handle.net/10220/19645 |
| Ամփոփում: | We report a novel electron-rich molecule based on 3,4-ethylenedioxythiophene (H101). When used as the hole-transporting layer in a perovskite-based solar cell, the power-conversion efficiency reached 13.8 % under AM 1.5G solar simulation. This result is comparable with that obtained using the well-known hole transporting material 2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenylamine)-9,9′-spirobifluorene (spiro-OMeTAD). This is the first heterocycle-containing material achieving >10 % efficiency in such devices, and has great potential to replace the expensive spiro-OMeTAD given its much simpler and cheaper synthesis. |
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