Going green for discrete power diode manufacturers
Owing to its deep diffusion requirement for discrete power diode of rating above 400V and 1A, the time and temperature for p+ and n+ diffusion of a typical p+nn+ discrete power diode are around 1100 degree celcius and more than 36 hours. This represents tremendous power consumption in the manufactur...
Main Authors: | Tan, Cher Ming, Sun, Lina, Wang, Chase |
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Other Authors: | School of Electrical and Electronic Engineering |
Format: | Conference Paper |
Language: | English |
Published: |
2010
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/99901 http://hdl.handle.net/10220/6360 |
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