Dopant profile model in a shallow germanium n+/p junction
A challenging issue is to estimate the n-type dopant profiles and, consequently, their diffusivities in shallow Ge n+/p junctions because of their abnormal dopant profiles that do not follow conventional Gaussian-distribution-based diffusion theory. In order to fit the abnormal dopant profiles in sh...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2014
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/99968 http://hdl.handle.net/10220/18462 |
| _version_ | 1826110222381350912 |
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| author | Baek, Jung Woo Shim, Jaewoo Park, Jin-Hong Jung, Woo-Shik Yu, Hyun-Yong |
| author2 | School of Mechanical and Aerospace Engineering |
| author_facet | School of Mechanical and Aerospace Engineering Baek, Jung Woo Shim, Jaewoo Park, Jin-Hong Jung, Woo-Shik Yu, Hyun-Yong |
| author_sort | Baek, Jung Woo |
| collection | NTU |
| description | A challenging issue is to estimate the n-type dopant profiles and, consequently, their diffusivities in shallow Ge n+/p junctions because of their abnormal dopant profiles that do not follow conventional Gaussian-distribution-based diffusion theory. In order to fit the abnormal dopant profiles in shallow junctions, what are due to (1) fast and asymmetric diffusion of n-type dopants and (2) dopant pileup caused by surface back-scattering phenomenon, we propose a new profiling function and verify it by using a fitting algorithm based on the least-squares method. Through this fitting algorithm, we estimate the diffusivity and peak-position values from the raw dopant profile data, and we provide the experimental diffusivity equations as a function of the annealing temperature. |
| first_indexed | 2024-10-01T02:30:52Z |
| format | Journal Article |
| id | ntu-10356/99968 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:30:52Z |
| publishDate | 2014 |
| record_format | dspace |
| spelling | ntu-10356/999682020-03-07T13:22:19Z Dopant profile model in a shallow germanium n+/p junction Baek, Jung Woo Shim, Jaewoo Park, Jin-Hong Jung, Woo-Shik Yu, Hyun-Yong School of Mechanical and Aerospace Engineering DRNTU::Engineering::Mechanical engineering A challenging issue is to estimate the n-type dopant profiles and, consequently, their diffusivities in shallow Ge n+/p junctions because of their abnormal dopant profiles that do not follow conventional Gaussian-distribution-based diffusion theory. In order to fit the abnormal dopant profiles in shallow junctions, what are due to (1) fast and asymmetric diffusion of n-type dopants and (2) dopant pileup caused by surface back-scattering phenomenon, we propose a new profiling function and verify it by using a fitting algorithm based on the least-squares method. Through this fitting algorithm, we estimate the diffusivity and peak-position values from the raw dopant profile data, and we provide the experimental diffusivity equations as a function of the annealing temperature. 2014-01-13T07:20:33Z 2019-12-06T20:14:07Z 2014-01-13T07:20:33Z 2019-12-06T20:14:07Z 2013 2013 Journal Article Baek, J. W., Shim, J., Park, J. H., Jung, W. S., & Yu, H. Y. (2013). Dopant Profile Model in a Shallow Germanium n+/p Junction. Journal of The Korean Physical Society, 63(10), 1855-1858. https://hdl.handle.net/10356/99968 http://hdl.handle.net/10220/18462 10.3938/jkps.63.1855 175128 en Journal of the Korean physical society © 2013 The Korean Physical Society |
| spellingShingle | DRNTU::Engineering::Mechanical engineering Baek, Jung Woo Shim, Jaewoo Park, Jin-Hong Jung, Woo-Shik Yu, Hyun-Yong Dopant profile model in a shallow germanium n+/p junction |
| title | Dopant profile model in a shallow germanium n+/p junction |
| title_full | Dopant profile model in a shallow germanium n+/p junction |
| title_fullStr | Dopant profile model in a shallow germanium n+/p junction |
| title_full_unstemmed | Dopant profile model in a shallow germanium n+/p junction |
| title_short | Dopant profile model in a shallow germanium n+/p junction |
| title_sort | dopant profile model in a shallow germanium n p junction |
| topic | DRNTU::Engineering::Mechanical engineering |
| url | https://hdl.handle.net/10356/99968 http://hdl.handle.net/10220/18462 |
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