Surface integrity and removal rate of silicon sputtered with focused ion beam
This paper investigates the micromachinability of (100) silicon by focused gallium ion beam sputtering at normal incident angle. Effect of the beam parameters (dose, aperture and accelerating voltage) and the beam scanning parameters (pixel spacing, dwell time, retracing time and scanning type) on t...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Taylor and Francis Inc.
2001
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| Online Access: | http://irep.iium.edu.my/27113/1/025_MST_2001_5%282%29_239-254.pdf |
| _version_ | 1825646954299785216 |
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| author | Hung, NguyenPhu Ali, Mohammad Yeakub Fu, Yongqi Ong, NanShing Tay, MengLeong |
| author_facet | Hung, NguyenPhu Ali, Mohammad Yeakub Fu, Yongqi Ong, NanShing Tay, MengLeong |
| author_sort | Hung, NguyenPhu |
| collection | IIUM |
| description | This paper investigates the micromachinability of (100) silicon by focused gallium ion beam sputtering at normal incident angle. Effect of the beam parameters (dose, aperture and accelerating voltage) and the beam scanning parameters (pixel spacing, dwell time, retracing time and scanning type) on the surface integrity and material removal rate were studied. Statistical models derived from factorial experiments were used to predict the sputtered depths and material removal rates of silicon. The sputtering depth increased with higher accelerating voltage, more ion dose, shorter pixel spacing, and longer dwell time. Similar trends were found for predicting the material removal rate. A surface roughness in the range 2-5 nm was achieved, and was found to be linearly dependent on the pixel spacing.
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| first_indexed | 2024-03-05T23:10:23Z |
| format | Article |
| id | oai:generic.eprints.org:27113 |
| institution | International Islamic University Malaysia |
| language | English |
| last_indexed | 2024-03-13T19:02:30Z |
| publishDate | 2001 |
| publisher | Taylor and Francis Inc. |
| record_format | dspace |
| spelling | oai:generic.eprints.org:271132013-07-23T07:51:09Z http://irep.iium.edu.my/27113/ Surface integrity and removal rate of silicon sputtered with focused ion beam Hung, NguyenPhu Ali, Mohammad Yeakub Fu, Yongqi Ong, NanShing Tay, MengLeong TS Manufactures This paper investigates the micromachinability of (100) silicon by focused gallium ion beam sputtering at normal incident angle. Effect of the beam parameters (dose, aperture and accelerating voltage) and the beam scanning parameters (pixel spacing, dwell time, retracing time and scanning type) on the surface integrity and material removal rate were studied. Statistical models derived from factorial experiments were used to predict the sputtered depths and material removal rates of silicon. The sputtering depth increased with higher accelerating voltage, more ion dose, shorter pixel spacing, and longer dwell time. Similar trends were found for predicting the material removal rate. A surface roughness in the range 2-5 nm was achieved, and was found to be linearly dependent on the pixel spacing. Taylor and Francis Inc. 2001 Article PeerReviewed application/pdf en http://irep.iium.edu.my/27113/1/025_MST_2001_5%282%29_239-254.pdf Hung, NguyenPhu and Ali, Mohammad Yeakub and Fu, Yongqi and Ong, NanShing and Tay, MengLeong (2001) Surface integrity and removal rate of silicon sputtered with focused ion beam. Machining Science and Technology, 5 (2). pp. 239-254. ISSN 1091-0344 http://www.tandfonline.com/doi/full/10.1081/MST-100107845#.Ue42cNJHIrU 10.1081/MST-100107845 |
| spellingShingle | TS Manufactures Hung, NguyenPhu Ali, Mohammad Yeakub Fu, Yongqi Ong, NanShing Tay, MengLeong Surface integrity and removal rate of silicon sputtered with focused ion beam |
| title | Surface integrity and removal rate of silicon sputtered with focused ion beam |
| title_full | Surface integrity and removal rate of silicon sputtered with focused ion beam |
| title_fullStr | Surface integrity and removal rate of silicon sputtered with focused ion beam |
| title_full_unstemmed | Surface integrity and removal rate of silicon sputtered with focused ion beam |
| title_short | Surface integrity and removal rate of silicon sputtered with focused ion beam |
| title_sort | surface integrity and removal rate of silicon sputtered with focused ion beam |
| topic | TS Manufactures |
| url | http://irep.iium.edu.my/27113/1/025_MST_2001_5%282%29_239-254.pdf |
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