Strain Effects on the Band Structures of Monolayer GaN from the Density Functional Theory
We perform the density functional theory calculations (DFT) to study the effect of biaxial strain on the band structures of monolayer GaN. We apply compressive and tensile strains up to 10%. There is no change of bandgap for the applied tensile strains below 8%. The compressive strains have a con...
| Main Authors: | , |
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| Format: | Other |
| Language: | English |
| Published: |
Materials Science Forum
2022
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| Subjects: | |
| Online Access: | https://repository.ugm.ac.id/284368/1/186..pdf |
| Summary: | We perform the density functional theory calculations (DFT) to study the effect of biaxial
strain on the band structures of monolayer GaN. We apply compressive and tensile strains up to
10%. There is no change of bandgap for the applied tensile strains below 8%. The compressive
strains have a constant bandgap which is slightly smaller than that of the zero strain. We find that
the applied tensile strain above 8% affects its electronic structure and decreases its bandgap energy
by about 0.05 eV while the compressive strain above 4% decreases its bandgap about 0.22 eV |
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