Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers
A cooperative transition of antisite As (AsGa) defects in Be-doped low-temperature grown GaAs layers was studied by comparing magnetization of samples with different AsGa+ ions concentrations. With the aid of first principle calculations, the origin of cooperative transitions was shown to be due to...
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| Format: | Article |
| Language: | English |
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Elsevier
2013
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| Online Access: | http://irep.iium.edu.my/29881/1/journal_of_crystal_growth.pdf |
| _version_ | 1825647264160284672 |
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| author | Mohamed, Mohd Ambri Lam, Pham Tien Otsuka, N. |
| author_facet | Mohamed, Mohd Ambri Lam, Pham Tien Otsuka, N. |
| author_sort | Mohamed, Mohd Ambri |
| collection | IIUM |
| description | A cooperative transition of antisite As (AsGa) defects in Be-doped low-temperature grown GaAs layers was studied by comparing magnetization of samples with different AsGa+ ions concentrations. With the aid of first principle calculations, the origin of cooperative transitions was shown to be due to a lattice strain which results in elastic interactions among AsGa defects. A change in magnetizations is induced by large lattice distortions during transition of AsGa defects from substitutional sites to interstitial sites. The calculation of electron states of an AsGa atom with a shallow acceptor Be atom show that at the transition, an AsGa+ ion is displaced to the interstitial site and becomes a neutral atom, leading to a magnetization annihilation. |
| first_indexed | 2024-03-05T23:15:04Z |
| format | Article |
| id | oai:generic.eprints.org:29881 |
| institution | International Islamic University Malaysia |
| language | English |
| last_indexed | 2024-03-05T23:15:04Z |
| publishDate | 2013 |
| publisher | Elsevier |
| record_format | dspace |
| spelling | oai:generic.eprints.org:298812013-07-29T01:49:38Z http://irep.iium.edu.my/29881/ Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers Mohamed, Mohd Ambri Lam, Pham Tien Otsuka, N. QC Physics QD Chemistry TK7885 Computer engineering A cooperative transition of antisite As (AsGa) defects in Be-doped low-temperature grown GaAs layers was studied by comparing magnetization of samples with different AsGa+ ions concentrations. With the aid of first principle calculations, the origin of cooperative transitions was shown to be due to a lattice strain which results in elastic interactions among AsGa defects. A change in magnetizations is induced by large lattice distortions during transition of AsGa defects from substitutional sites to interstitial sites. The calculation of electron states of an AsGa atom with a shallow acceptor Be atom show that at the transition, an AsGa+ ion is displaced to the interstitial site and becomes a neutral atom, leading to a magnetization annihilation. Elsevier 2013-01-04 Article PeerReviewed application/pdf en http://irep.iium.edu.my/29881/1/journal_of_crystal_growth.pdf Mohamed, Mohd Ambri and Lam, Pham Tien and Otsuka, N. (2013) Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers. Journal of Crystal Growth, 378. pp. 329-332. ISSN 0022-0248 (In Press) http://dx.doi.org/10.1016/j.jcrysgro.2012.12.070 10.1016/j.jcrysgro.2012.12.070 |
| spellingShingle | QC Physics QD Chemistry TK7885 Computer engineering Mohamed, Mohd Ambri Lam, Pham Tien Otsuka, N. Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers |
| title | Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers |
| title_full | Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers |
| title_fullStr | Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers |
| title_full_unstemmed | Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers |
| title_short | Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers |
| title_sort | origin of cooperative transition of antisite arsenic defects in be doped low temperature grown gaas layers |
| topic | QC Physics QD Chemistry TK7885 Computer engineering |
| url | http://irep.iium.edu.my/29881/1/journal_of_crystal_growth.pdf |
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