Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers
A cooperative transition of antisite As (AsGa) defects in Be-doped low-temperature grown GaAs layers was studied by comparing magnetization of samples with different AsGa+ ions concentrations. With the aid of first principle calculations, the origin of cooperative transitions was shown to be due to...
| Huvudupphovsmän: | , , |
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| Materialtyp: | Artikel |
| Språk: | English |
| Publicerad: |
Elsevier
2013
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| Ämnen: | |
| Länkar: | http://irep.iium.edu.my/29881/1/journal_of_crystal_growth.pdf |