Using MEMS in class D amplifiers for standard GSM carrier

The equivalent circuit of MEMS capacitive switches can be used to analyze a class D power amplifier, operated by a power supply of 3.7V. The system is intended for GSM audio frequency to produce an output power of (0.5-1.0) mW at a load output impedance of (8-10) Q. The system gain must be greater t...

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Main Authors: Al-Khateeb, Khalid A. Saeed, M. Harun, Nik M. Yusri
Format: Proceeding Paper
Language:English
Published: 2008
Subjects:
Online Access:http://irep.iium.edu.my/5731/1/Using_MEMS_in_Class_D_Amplifiers_for_Standard_GSM_Carrier.pdf
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author Al-Khateeb, Khalid A. Saeed
M. Harun, Nik M. Yusri
author_facet Al-Khateeb, Khalid A. Saeed
M. Harun, Nik M. Yusri
author_sort Al-Khateeb, Khalid A. Saeed
collection IIUM
description The equivalent circuit of MEMS capacitive switches can be used to analyze a class D power amplifier, operated by a power supply of 3.7V. The system is intended for GSM audio frequency to produce an output power of (0.5-1.0) mW at a load output impedance of (8-10) Q. The system gain must be greater than 33 dBm and the estimated loss (0.5-1) dB. A model for the power amplifier using MEMS passive devices has been developed. The model helps to determine the design parameters that affect the performance and reliability of the system that operate an RF transceiver. The optimization of the amplifier and the MEMS capacitor switching devices and how to integrate the system, will also be discussed. The design and the equivalent circuit were simulated using a PSpice model.
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spelling oai:generic.eprints.org:57312012-05-09T08:10:42Z http://irep.iium.edu.my/5731/ Using MEMS in class D amplifiers for standard GSM carrier Al-Khateeb, Khalid A. Saeed M. Harun, Nik M. Yusri TK5101 Telecommunication. Including telegraphy, radio, radar, television TK7885 Computer engineering The equivalent circuit of MEMS capacitive switches can be used to analyze a class D power amplifier, operated by a power supply of 3.7V. The system is intended for GSM audio frequency to produce an output power of (0.5-1.0) mW at a load output impedance of (8-10) Q. The system gain must be greater than 33 dBm and the estimated loss (0.5-1) dB. A model for the power amplifier using MEMS passive devices has been developed. The model helps to determine the design parameters that affect the performance and reliability of the system that operate an RF transceiver. The optimization of the amplifier and the MEMS capacitor switching devices and how to integrate the system, will also be discussed. The design and the equivalent circuit were simulated using a PSpice model. 2008-05-11 Proceeding Paper PeerReviewed application/pdf en http://irep.iium.edu.my/5731/1/Using_MEMS_in_Class_D_Amplifiers_for_Standard_GSM_Carrier.pdf Al-Khateeb, Khalid A. Saeed and M. Harun, Nik M. Yusri (2008) Using MEMS in class D amplifiers for standard GSM carrier. In: International Conference on Computer and Communication Engineering, ICCCE'08, (13 - 15 May 2008) hosted at Kuala Lumpur Malaysia , 13-15 May 2008 , Kuala Lumpur, Malaysia.
spellingShingle TK5101 Telecommunication. Including telegraphy, radio, radar, television
TK7885 Computer engineering
Al-Khateeb, Khalid A. Saeed
M. Harun, Nik M. Yusri
Using MEMS in class D amplifiers for standard GSM carrier
title Using MEMS in class D amplifiers for standard GSM carrier
title_full Using MEMS in class D amplifiers for standard GSM carrier
title_fullStr Using MEMS in class D amplifiers for standard GSM carrier
title_full_unstemmed Using MEMS in class D amplifiers for standard GSM carrier
title_short Using MEMS in class D amplifiers for standard GSM carrier
title_sort using mems in class d amplifiers for standard gsm carrier
topic TK5101 Telecommunication. Including telegraphy, radio, radar, television
TK7885 Computer engineering
url http://irep.iium.edu.my/5731/1/Using_MEMS_in_Class_D_Amplifiers_for_Standard_GSM_Carrier.pdf
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