Recent nanofabrication of silicon dioxide on silicon wafer using AFM operated at low temperature
Field-induced oxidation has become a promising process that is capable of directly producing high-resolution surface oxide patterns on variety materials. This report initiated the idea of the possibility of a controlled nanofabrication of SiO2 on silicon wafer by utilizing a frozen humid air film. A...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Trans Tech Publications Ltd., Switzerland
2011
|
| Subjects: | |
| Online Access: | http://irep.iium.edu.my/8577/1/AGUS_-_Applied_Mechanics_and_Materials_2011_-_Nanofabrication.pdf |
| _version_ | 1825645034084499456 |
|---|---|
| author | Sutjipto, Agus Geter Edy , Afzeri Shafie, Amir Akramin |
| author_facet | Sutjipto, Agus Geter Edy , Afzeri Shafie, Amir Akramin |
| author_sort | Sutjipto, Agus Geter Edy |
| collection | IIUM |
| description | Field-induced oxidation has become a promising process that is capable of directly producing high-resolution surface oxide patterns on variety materials. This report initiated the idea of the possibility of a controlled nanofabrication of SiO2 on silicon wafer by utilizing a frozen humid air film. A low temperature (-70oC) operation of an atomic force microscope (AFM) was used to condense ambient humidity (40%) to perform a thin frozen water layer covering a silicon wafer surface. A scanning probe was contacted with the layer and a zero bias voltage was applied to the sample surface with the AFM probe tip connected to the reference -2.44V. The frozen water
film acted both as an electrolyte to form silicon dioxide and as a resource of hydroxide. Using this technique (a) a consistency in height of 6 nm silicon dioxide patterns layer could be achieved showing that the effect of tip vibration could be reduced; (b) easy to remove frozen water by just operating the AFM to the ambient temperature; (c) it is possible to control thickness by making different humidity. |
| first_indexed | 2024-03-05T22:41:40Z |
| format | Article |
| id | oai:generic.eprints.org:8577 |
| institution | International Islamic University Malaysia |
| language | English |
| last_indexed | 2024-03-05T22:41:40Z |
| publishDate | 2011 |
| publisher | Trans Tech Publications Ltd., Switzerland |
| record_format | dspace |
| spelling | oai:generic.eprints.org:85772011-12-09T07:14:28Z http://irep.iium.edu.my/8577/ Recent nanofabrication of silicon dioxide on silicon wafer using AFM operated at low temperature Sutjipto, Agus Geter Edy , Afzeri Shafie, Amir Akramin TA401 Materials of engineering and construction Field-induced oxidation has become a promising process that is capable of directly producing high-resolution surface oxide patterns on variety materials. This report initiated the idea of the possibility of a controlled nanofabrication of SiO2 on silicon wafer by utilizing a frozen humid air film. A low temperature (-70oC) operation of an atomic force microscope (AFM) was used to condense ambient humidity (40%) to perform a thin frozen water layer covering a silicon wafer surface. A scanning probe was contacted with the layer and a zero bias voltage was applied to the sample surface with the AFM probe tip connected to the reference -2.44V. The frozen water film acted both as an electrolyte to form silicon dioxide and as a resource of hydroxide. Using this technique (a) a consistency in height of 6 nm silicon dioxide patterns layer could be achieved showing that the effect of tip vibration could be reduced; (b) easy to remove frozen water by just operating the AFM to the ambient temperature; (c) it is possible to control thickness by making different humidity. Trans Tech Publications Ltd., Switzerland 2011-08-08 Article PeerReviewed application/pdf en http://irep.iium.edu.my/8577/1/AGUS_-_Applied_Mechanics_and_Materials_2011_-_Nanofabrication.pdf Sutjipto, Agus Geter Edy and , Afzeri and Shafie, Amir Akramin (2011) Recent nanofabrication of silicon dioxide on silicon wafer using AFM operated at low temperature. Applied Mechanics and Materials, 84-85. pp. 317-320. ISSN 1660-9336 http://www.scientific.net/AMM.84-85.317 10.4028/www.scientific.net/AMM.84-85.317 |
| spellingShingle | TA401 Materials of engineering and construction Sutjipto, Agus Geter Edy , Afzeri Shafie, Amir Akramin Recent nanofabrication of silicon dioxide on silicon wafer using AFM operated at low temperature |
| title | Recent nanofabrication of silicon dioxide on silicon wafer using AFM operated at low temperature |
| title_full | Recent nanofabrication of silicon dioxide on silicon wafer using AFM operated at low temperature |
| title_fullStr | Recent nanofabrication of silicon dioxide on silicon wafer using AFM operated at low temperature |
| title_full_unstemmed | Recent nanofabrication of silicon dioxide on silicon wafer using AFM operated at low temperature |
| title_short | Recent nanofabrication of silicon dioxide on silicon wafer using AFM operated at low temperature |
| title_sort | recent nanofabrication of silicon dioxide on silicon wafer using afm operated at low temperature |
| topic | TA401 Materials of engineering and construction |
| url | http://irep.iium.edu.my/8577/1/AGUS_-_Applied_Mechanics_and_Materials_2011_-_Nanofabrication.pdf |
| work_keys_str_mv | AT sutjiptoagusgeteredy recentnanofabricationofsilicondioxideonsiliconwaferusingafmoperatedatlowtemperature AT afzeri recentnanofabricationofsilicondioxideonsiliconwaferusingafmoperatedatlowtemperature AT shafieamirakramin recentnanofabricationofsilicondioxideonsiliconwaferusingafmoperatedatlowtemperature |