Theory and experiment for silicon Schottky barrier diodes at high current density
Metal-silicon Schottky barrier diodes exhibit n values which theoretically vary as a function of doping and applied voltage. The expected variation depends on which theoretical model is used to describe the current transport. Titanium n-type silicon barriers were prepared. At a doping level of 3...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
1977
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| Subjects: | |
| Online Access: | https://repository.londonmet.ac.uk/5274/1/Diode.pdf |