Interference-based molecular transistors
Molecular transistors have the potential for switching with lower gate voltages than conventional field-effect transistors. We have calculated the performance of a single-molecule device in which there is interference between electron transport through the highest occupied molecular orbital and the...
| Hoofdauteurs: | , , , |
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| Formaat: | Journal article |
| Gepubliceerd in: |
Nature Publishing Group
2016
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| _version_ | 1826256419819618304 |
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| author | Li, Y Mol, J Benjamin, S Briggs, G |
| author_facet | Li, Y Mol, J Benjamin, S Briggs, G |
| author_sort | Li, Y |
| collection | OXFORD |
| description | Molecular transistors have the potential for switching with lower gate voltages than conventional field-effect transistors. We have calculated the performance of a single-molecule device in which there is interference between electron transport through the highest occupied molecular orbital and the lowest unoccupied molecular orbital of a single molecule. Quantum interference results in a subthreshold slope that is independent of temperature. For realistic parameters the change in gate potential required for a change in source-drain current of two decades is 20 mV, which is a factor of six smaller than the theoretical limit for a metal-oxide-semiconductor field-effect transistor. |
| first_indexed | 2024-03-06T18:01:59Z |
| format | Journal article |
| id | oxford-uuid:0014cf7f-b905-4bf4-82f8-9397dfea3ea8 |
| institution | University of Oxford |
| last_indexed | 2024-03-06T18:01:59Z |
| publishDate | 2016 |
| publisher | Nature Publishing Group |
| record_format | dspace |
| spelling | oxford-uuid:0014cf7f-b905-4bf4-82f8-9397dfea3ea82022-03-26T08:27:41ZInterference-based molecular transistorsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:0014cf7f-b905-4bf4-82f8-9397dfea3ea8Symplectic Elements at OxfordNature Publishing Group2016Li, YMol, JBenjamin, SBriggs, GMolecular transistors have the potential for switching with lower gate voltages than conventional field-effect transistors. We have calculated the performance of a single-molecule device in which there is interference between electron transport through the highest occupied molecular orbital and the lowest unoccupied molecular orbital of a single molecule. Quantum interference results in a subthreshold slope that is independent of temperature. For realistic parameters the change in gate potential required for a change in source-drain current of two decades is 20 mV, which is a factor of six smaller than the theoretical limit for a metal-oxide-semiconductor field-effect transistor. |
| spellingShingle | Li, Y Mol, J Benjamin, S Briggs, G Interference-based molecular transistors |
| title | Interference-based molecular transistors |
| title_full | Interference-based molecular transistors |
| title_fullStr | Interference-based molecular transistors |
| title_full_unstemmed | Interference-based molecular transistors |
| title_short | Interference-based molecular transistors |
| title_sort | interference based molecular transistors |
| work_keys_str_mv | AT liy interferencebasedmoleculartransistors AT molj interferencebasedmoleculartransistors AT benjamins interferencebasedmoleculartransistors AT briggsg interferencebasedmoleculartransistors |