Transferable reduced TB models for elemental Si and N and binary Si-N systems
<p>Silicon nitride is a bulk and a coating material exhibiting excellent mechanical properties. The understanding of the complex processes at the nanometre scale gained through experimental research will be enhanced by the existence of a computationally efficient and accurate model that is abl...
第一著者: | Gehrmann, J |
---|---|
その他の著者: | Kolmogorov, A |
フォーマット: | 学位論文 |
言語: | English |
出版事項: |
2013
|
主題: |
類似資料
-
Computer simulation studies in condensed-matter physics XVIII : Proceedings of the Eighteenth Workshop, Athens, Ga, USA, March 7-11, 2005 /
著者:: Landau, D. P., 等
出版事項: (2006) -
A theoretical investigation of gas source growth of the Si(001) surface
著者:: Bowler, D, 等
出版事項: (1997) -
Magnetotransport in graphene and related two-dimensional systems
著者:: Huang, N
出版事項: (2016) -
Electronic excitations in semiconductors and insulators using the Sternheimer-GW method
著者:: Lambert, H, 等
出版事項: (2014) -
Source data for "Highly polarized electrically driven single-photon emission from a non-polar InGaN quantum dot"
著者:: Kocher, C, 等
出版事項: (2017)