Elevated-temperature STM study of Ge and Si growth on Si(001) from GeH4 and Si2H6
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Format: | Conference item |
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1997
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author | Owen, J Miki, K Bowler, D Briggs, G Goldfarb, I |
author_facet | Owen, J Miki, K Bowler, D Briggs, G Goldfarb, I |
author_sort | Owen, J |
collection | OXFORD |
description | |
first_indexed | 2024-03-06T18:05:49Z |
format | Conference item |
id | oxford-uuid:01666c63-00a8-472a-ab75-9e3eda9d4358 |
institution | University of Oxford |
last_indexed | 2024-03-06T18:05:49Z |
publishDate | 1997 |
record_format | dspace |
spelling | oxford-uuid:01666c63-00a8-472a-ab75-9e3eda9d43582022-03-26T08:34:46ZElevated-temperature STM study of Ge and Si growth on Si(001) from GeH4 and Si2H6Conference itemhttp://purl.org/coar/resource_type/c_5794uuid:01666c63-00a8-472a-ab75-9e3eda9d4358Symplectic Elements at Oxford1997Owen, JMiki, KBowler, DBriggs, GGoldfarb, I |
spellingShingle | Owen, J Miki, K Bowler, D Briggs, G Goldfarb, I Elevated-temperature STM study of Ge and Si growth on Si(001) from GeH4 and Si2H6 |
title | Elevated-temperature STM study of Ge and Si growth on Si(001) from GeH4 and Si2H6 |
title_full | Elevated-temperature STM study of Ge and Si growth on Si(001) from GeH4 and Si2H6 |
title_fullStr | Elevated-temperature STM study of Ge and Si growth on Si(001) from GeH4 and Si2H6 |
title_full_unstemmed | Elevated-temperature STM study of Ge and Si growth on Si(001) from GeH4 and Si2H6 |
title_short | Elevated-temperature STM study of Ge and Si growth on Si(001) from GeH4 and Si2H6 |
title_sort | elevated temperature stm study of ge and si growth on si 001 from geh4 and si2h6 |
work_keys_str_mv | AT owenj elevatedtemperaturestmstudyofgeandsigrowthonsi001fromgeh4andsi2h6 AT mikik elevatedtemperaturestmstudyofgeandsigrowthonsi001fromgeh4andsi2h6 AT bowlerd elevatedtemperaturestmstudyofgeandsigrowthonsi001fromgeh4andsi2h6 AT briggsg elevatedtemperaturestmstudyofgeandsigrowthonsi001fromgeh4andsi2h6 AT goldfarbi elevatedtemperaturestmstudyofgeandsigrowthonsi001fromgeh4andsi2h6 |