Analytic model of thermal runaway in silicon detectors
Usually the thermal behavior of silicon detectors is predicted from numerical methods (FEA or finite difference methods). However, these results are specific to the modelled structure and the input parameter set. Here we pursue the complementary, analytic, approach which offers some general (if appr...
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| Format: | Journal article |
| Language: | English |
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2010
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| _version_ | 1797050524842852352 |
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| author | Beck, G Viehhauser, G |
| author_facet | Beck, G Viehhauser, G |
| author_sort | Beck, G |
| collection | OXFORD |
| description | Usually the thermal behavior of silicon detectors is predicted from numerical methods (FEA or finite difference methods). However, these results are specific to the modelled structure and the input parameter set. Here we pursue the complementary, analytic, approach which offers some general (if approximate) results that allow relatively simple extrapolation of the performance of a specific detector design. We present simple network models to calculate analytically the limit of thermal stability in silicon detectors. In particular we use a minimal model, which ignores the thermal resistance within the sensor in comparison with the off-detector resistance. We further discuss an extension of this model to study the effects of a finite sensor thermal resistance. © 2010 Elsevier B.V. |
| first_indexed | 2024-03-06T18:06:27Z |
| format | Journal article |
| id | oxford-uuid:0193c19a-1d10-4edd-8c94-2873de7ff8fc |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T18:06:27Z |
| publishDate | 2010 |
| record_format | dspace |
| spelling | oxford-uuid:0193c19a-1d10-4edd-8c94-2873de7ff8fc2022-03-26T08:35:49ZAnalytic model of thermal runaway in silicon detectorsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:0193c19a-1d10-4edd-8c94-2873de7ff8fcEnglishSymplectic Elements at Oxford2010Beck, GViehhauser, GUsually the thermal behavior of silicon detectors is predicted from numerical methods (FEA or finite difference methods). However, these results are specific to the modelled structure and the input parameter set. Here we pursue the complementary, analytic, approach which offers some general (if approximate) results that allow relatively simple extrapolation of the performance of a specific detector design. We present simple network models to calculate analytically the limit of thermal stability in silicon detectors. In particular we use a minimal model, which ignores the thermal resistance within the sensor in comparison with the off-detector resistance. We further discuss an extension of this model to study the effects of a finite sensor thermal resistance. © 2010 Elsevier B.V. |
| spellingShingle | Beck, G Viehhauser, G Analytic model of thermal runaway in silicon detectors |
| title | Analytic model of thermal runaway in silicon detectors |
| title_full | Analytic model of thermal runaway in silicon detectors |
| title_fullStr | Analytic model of thermal runaway in silicon detectors |
| title_full_unstemmed | Analytic model of thermal runaway in silicon detectors |
| title_short | Analytic model of thermal runaway in silicon detectors |
| title_sort | analytic model of thermal runaway in silicon detectors |
| work_keys_str_mv | AT beckg analyticmodelofthermalrunawayinsilicondetectors AT viehhauserg analyticmodelofthermalrunawayinsilicondetectors |