Analytic model of thermal runaway in silicon detectors

Usually the thermal behavior of silicon detectors is predicted from numerical methods (FEA or finite difference methods). However, these results are specific to the modelled structure and the input parameter set. Here we pursue the complementary, analytic, approach which offers some general (if appr...

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Bibliographic Details
Main Authors: Beck, G, Viehhauser, G
Format: Journal article
Language:English
Published: 2010