Optimising control of microwave plasma bias enhanced nucleation for heteroepitaxial chemical vapour deposition diamond

Optimising control of microwave plasma bias enhanced nucleation for heteroepitaxial chemical vapour deposition diamond

Bias enhanced nucleation (BEN) during microwave plasma enhanced chemical vapour deposition of diamond on Si(100) has been studied using atomic force microscopy (AFM), scanning electron microscopy, Raman scattering and optical reflectivity measurements. The critical nature of the BEN treatment period...

Podrobná bibliografie
Hlavní autoři:	Marshall, R, Whitfield, MD, Tracey, S, Thompson, D, Foord, J, Jackman, R
Médium:	Conference item
Vydáno:	1997

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