Optimising control of microwave plasma bias enhanced nucleation for heteroepitaxial chemical vapour deposition diamond

Optimising control of microwave plasma bias enhanced nucleation for heteroepitaxial chemical vapour deposition diamond

Bias enhanced nucleation (BEN) during microwave plasma enhanced chemical vapour deposition of diamond on Si(100) has been studied using atomic force microscopy (AFM), scanning electron microscopy, Raman scattering and optical reflectivity measurements. The critical nature of the BEN treatment period...

書誌詳細
主要な著者:	Marshall, R, Whitfield, MD, Tracey, S, Thompson, D, Foord, J, Jackman, R
フォーマット:	Conference item
出版事項:	1997

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