Optimising control of microwave plasma bias enhanced nucleation for heteroepitaxial chemical vapour deposition diamond
Bias enhanced nucleation (BEN) during microwave plasma enhanced chemical vapour deposition of diamond on Si(100) has been studied using atomic force microscopy (AFM), scanning electron microscopy, Raman scattering and optical reflectivity measurements. The critical nature of the BEN treatment period...
| Hlavní autoři: | , , , , , |
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| Médium: | Conference item |
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1997
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