The effects of doping density and temperature on the optoelectronic properties of formamidinium tin triiodide thin films
Intrinsic and extrinsic optoelectronic properties are unraveled for formamidinium tin triiodide (FASnI3) thin films, whose background hole doping density was varied through SnF2 addition during film fabrication. Monomolecular charge-carrier recombination exhibits both a dopant-mediated part that gro...
| Principais autores: | , , , , , , , |
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| Formato: | Journal article |
| Publicado em: |
Wiley
2018
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