Accumulation of geometrically necessary dislocations near grain boundaries in deformed copper
Cross-correlation-based analysis of electron backscatter diffraction patterns has been used to map the distribution of geometrically necessary dislocation (GND) density in deformed polycrystalline copper. Patterning of the dislocations into high-density cell walls and low-density cell interiors was...
| Main Authors: | , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
2012
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