Alumina nanoparticle interfacial buffer layer for low-bandgap lead-tin perovskite solar cells
Mixed lead-tin (Pb:Sn) halide perovskites are promising absorbers with narrow-bandgaps (1.25–1.4 eV) suitable for high-efficiency all-perovskite tandem solar cells. However, solution processing of optimally thick Pb:Sn perovskite films is notoriously difficult in comparison with their neat-Pb counte...
| Main Authors: | , , , , , , , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
Wiley
2023
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| _version_ | 1797110694248710144 |
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| author | Jin, H Farrar, M Ball, J Dasgupta, A Caprioglio, P Narayanan, S Oliver, R Rombach, F Putland, B Johnston, M Snaith, H |
| author_facet | Jin, H Farrar, M Ball, J Dasgupta, A Caprioglio, P Narayanan, S Oliver, R Rombach, F Putland, B Johnston, M Snaith, H |
| author_sort | Jin, H |
| collection | OXFORD |
| description | Mixed lead-tin (Pb:Sn) halide perovskites are promising absorbers with narrow-bandgaps (1.25–1.4 eV) suitable for high-efficiency all-perovskite tandem solar cells. However, solution processing of optimally thick Pb:Sn perovskite films is notoriously difficult in comparison with their neat-Pb counterparts. This is partly due to the rapid crystallization of Sn-based perovskites, resulting in films that have a high degree of roughness. Rougher films are harder to coat conformally with subsequent layers using solution-based processing techniques leading to contact between the absorber and the top metal electrode in completed devices, resulting in a loss of VOC, fill factor, efficiency, and stability. Herein, this study employs a non-continuous layer of alumina nanoparticles distributed on the surface of rough Pb:Sn perovskite films. Using this approach, the conformality of the subsequent electron-transport layer, which is only tens of nanometres in thickness is improved. The overall maximum-power-point-tracked efficiency improves by 65% and the steady-state VOC improves by 28%. Application of the alumina nanoparticles as an interfacial buffer layer also results in highly reproducible Pb:Sn solar cell devices while simultaneously improving device stability at 65 °C under full spectrum simulated solar irradiance. Aged devices show a six-fold improvement in stability over pristine Pb:Sn devices, increasing their lifetime to 120 h. |
| first_indexed | 2024-03-07T07:58:25Z |
| format | Journal article |
| id | oxford-uuid:065afaaf-24ce-4819-85c0-6033ba710f41 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T07:58:25Z |
| publishDate | 2023 |
| publisher | Wiley |
| record_format | dspace |
| spelling | oxford-uuid:065afaaf-24ce-4819-85c0-6033ba710f412023-09-14T16:00:01ZAlumina nanoparticle interfacial buffer layer for low-bandgap lead-tin perovskite solar cellsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:065afaaf-24ce-4819-85c0-6033ba710f41EnglishSymplectic ElementsWiley2023Jin, HFarrar, MBall, JDasgupta, ACaprioglio, PNarayanan, SOliver, RRombach, FPutland, BJohnston, MSnaith, HMixed lead-tin (Pb:Sn) halide perovskites are promising absorbers with narrow-bandgaps (1.25–1.4 eV) suitable for high-efficiency all-perovskite tandem solar cells. However, solution processing of optimally thick Pb:Sn perovskite films is notoriously difficult in comparison with their neat-Pb counterparts. This is partly due to the rapid crystallization of Sn-based perovskites, resulting in films that have a high degree of roughness. Rougher films are harder to coat conformally with subsequent layers using solution-based processing techniques leading to contact between the absorber and the top metal electrode in completed devices, resulting in a loss of VOC, fill factor, efficiency, and stability. Herein, this study employs a non-continuous layer of alumina nanoparticles distributed on the surface of rough Pb:Sn perovskite films. Using this approach, the conformality of the subsequent electron-transport layer, which is only tens of nanometres in thickness is improved. The overall maximum-power-point-tracked efficiency improves by 65% and the steady-state VOC improves by 28%. Application of the alumina nanoparticles as an interfacial buffer layer also results in highly reproducible Pb:Sn solar cell devices while simultaneously improving device stability at 65 °C under full spectrum simulated solar irradiance. Aged devices show a six-fold improvement in stability over pristine Pb:Sn devices, increasing their lifetime to 120 h. |
| spellingShingle | Jin, H Farrar, M Ball, J Dasgupta, A Caprioglio, P Narayanan, S Oliver, R Rombach, F Putland, B Johnston, M Snaith, H Alumina nanoparticle interfacial buffer layer for low-bandgap lead-tin perovskite solar cells |
| title | Alumina nanoparticle interfacial buffer layer for low-bandgap lead-tin perovskite solar cells |
| title_full | Alumina nanoparticle interfacial buffer layer for low-bandgap lead-tin perovskite solar cells |
| title_fullStr | Alumina nanoparticle interfacial buffer layer for low-bandgap lead-tin perovskite solar cells |
| title_full_unstemmed | Alumina nanoparticle interfacial buffer layer for low-bandgap lead-tin perovskite solar cells |
| title_short | Alumina nanoparticle interfacial buffer layer for low-bandgap lead-tin perovskite solar cells |
| title_sort | alumina nanoparticle interfacial buffer layer for low bandgap lead tin perovskite solar cells |
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