Field effect transistors and phototransistors based upon p-type solution-processed PbS nanowires
We demonstrate the fabrication of solution processed highly crystalline p-type PbS nanowires via the oriented attachment of nanoparticles. The analysis of single nanowire field effect transistor (FET) devices revealed a hole conduction behaviour with average mobilities greater than 30 cm2 V−1 s−1, w...
| Main Authors: | , , , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
IOP Publishing
2018
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| _version_ | 1826257655528685568 |
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| author | Giraud, P Hou, B Pak, S Sohn, J Morris, S Cha, S Kim, J |
| author_facet | Giraud, P Hou, B Pak, S Sohn, J Morris, S Cha, S Kim, J |
| author_sort | Giraud, P |
| collection | OXFORD |
| description | We demonstrate the fabrication of solution processed highly crystalline p-type PbS nanowires via the oriented attachment of nanoparticles. The analysis of single nanowire field effect transistor (FET) devices revealed a hole conduction behaviour with average mobilities greater than 30 cm2 V−1 s−1, which is an order of magnitude higher than that reported to date for p-type PbS colloidal nanowires. We have investigated the response of the FETs to near-infrared light excitation and show herein that the nanowires exhibited gate-dependent photo-conductivities, enabling us to tune the device performances. The responsivity was found to be greater than 104 A W−1 together with a detectivity of 1013 Jones, which benefits from a photogating effect occurring at negative gate voltages. These encouraging detection parameters are accompanied by relatively short switching times of 15 ms at positive gate voltages, resulting from a combination of the standard photoconduction and the high crystallinity of the nanowires. Collectively, these results indicate that solution-processed PbS nanowires are promising nanomaterials for infrared photodetectors as well as p-type nanowire FETs. |
| first_indexed | 2024-03-06T18:21:35Z |
| format | Journal article |
| id | oxford-uuid:067b46b8-03b8-4b8d-a7a6-11a18f1791ab |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T18:21:35Z |
| publishDate | 2018 |
| publisher | IOP Publishing |
| record_format | dspace |
| spelling | oxford-uuid:067b46b8-03b8-4b8d-a7a6-11a18f1791ab2022-03-26T09:02:47ZField effect transistors and phototransistors based upon p-type solution-processed PbS nanowiresJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:067b46b8-03b8-4b8d-a7a6-11a18f1791abEnglishSymplectic Elements at OxfordIOP Publishing2018Giraud, PHou, BPak, SSohn, JMorris, SCha, SKim, JWe demonstrate the fabrication of solution processed highly crystalline p-type PbS nanowires via the oriented attachment of nanoparticles. The analysis of single nanowire field effect transistor (FET) devices revealed a hole conduction behaviour with average mobilities greater than 30 cm2 V−1 s−1, which is an order of magnitude higher than that reported to date for p-type PbS colloidal nanowires. We have investigated the response of the FETs to near-infrared light excitation and show herein that the nanowires exhibited gate-dependent photo-conductivities, enabling us to tune the device performances. The responsivity was found to be greater than 104 A W−1 together with a detectivity of 1013 Jones, which benefits from a photogating effect occurring at negative gate voltages. These encouraging detection parameters are accompanied by relatively short switching times of 15 ms at positive gate voltages, resulting from a combination of the standard photoconduction and the high crystallinity of the nanowires. Collectively, these results indicate that solution-processed PbS nanowires are promising nanomaterials for infrared photodetectors as well as p-type nanowire FETs. |
| spellingShingle | Giraud, P Hou, B Pak, S Sohn, J Morris, S Cha, S Kim, J Field effect transistors and phototransistors based upon p-type solution-processed PbS nanowires |
| title | Field effect transistors and phototransistors based upon p-type solution-processed PbS nanowires |
| title_full | Field effect transistors and phototransistors based upon p-type solution-processed PbS nanowires |
| title_fullStr | Field effect transistors and phototransistors based upon p-type solution-processed PbS nanowires |
| title_full_unstemmed | Field effect transistors and phototransistors based upon p-type solution-processed PbS nanowires |
| title_short | Field effect transistors and phototransistors based upon p-type solution-processed PbS nanowires |
| title_sort | field effect transistors and phototransistors based upon p type solution processed pbs nanowires |
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