Field effect transistors and phototransistors based upon p-type solution-processed PbS nanowires

Field effect transistors and phototransistors based upon p-type solution-processed PbS nanowires

We demonstrate the fabrication of solution processed highly crystalline p-type PbS nanowires via the oriented attachment of nanoparticles. The analysis of single nanowire field effect transistor (FET) devices revealed a hole conduction behaviour with average mobilities greater than 30 cm2 V−1 s−1, w...

Bibliográfalaš dieđut
Váldodahkkit:	Giraud, P, Hou, B, Pak, S, Sohn, J, Morris, S, Cha, S, Kim, J
Materiálatiipa:	Journal article
Giella:	English
Almmustuhtton:	IOP Publishing 2018

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