Field effect transistors and phototransistors based upon p-type solution-processed PbS nanowires
We demonstrate the fabrication of solution processed highly crystalline p-type PbS nanowires via the oriented attachment of nanoparticles. The analysis of single nanowire field effect transistor (FET) devices revealed a hole conduction behaviour with average mobilities greater than 30 cm2 V−1 s−1, w...
| Autors principals: | , , , , , , |
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| Format: | Journal article |
| Idioma: | English |
| Publicat: |
IOP Publishing
2018
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