Quantitative imaging of semiconductor doping distributions using a scanning electron microscope
The incorporation of impurity (i.e. dopant) atoms in semiconducting materials is fundamental to all semiconductor technology since the fabrication of (opto)electronic device structures requires precise, multi-dimensional control of the concentration and depth distribution of electrically active dopa...
| मुख्य लेखकों: | , , |
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| स्वरूप: | Conference item |
| प्रकाशित: |
1998
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