Vertically standing Ge nanowires on GaAs(110) substrates

Vertically standing Ge nanowires on GaAs(110) substrates

The growth of epitaxial Ge nanowires is investigated on (100), (111) B and (110) GaAs substrates in the growth temperature range from 300 to 380°C. Unlike epitaxial Ge nanowires on Ge or Si substrates, Ge nanowires on GaAs substrates grow predominantly along the direction. Using this unique property...

Bibliográfalaš dieđut
Váldodahkkit:	Song, MS, Jung, J, Kim, Y, Wang, Y, Zou, J, Joyce, H, Gao, Q, Tan, H, Jagadish, C
Materiálatiipa:	Journal article
Giella:	English
Almmustuhtton:	2008

Geahča maid

Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates
Dahkki: Kang, J, et al.
Almmustuhtton: (2010)

Novel growth and properties of GaAs nanowires on Si substrates.
Dahkki: Kang, J, et al.
Almmustuhtton: (2010)

Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures
Dahkki: Paladugu, M, et al.
Almmustuhtton: (2008)

Defect-Free GaAs/AlGaAs Core-Shell Nanowires on Si Substrates
Dahkki: Kang, J, et al.
Almmustuhtton: (2011)

Self-healing of fractured GaAs nanowires.
Dahkki: Wang, Y, et al.
Almmustuhtton: (2011)

Growth, structural and optical properties of GaAs, InGaAs and AlGaAs nanowires and nanowire heterostruetures
Dahkki: Joyce, H, et al.
Almmustuhtton: (2007)

Improvement of morphology, structure, and optical properties of GaAs nanowires grown on Si substrates
Dahkki: Kang, J, et al.
Almmustuhtton: (2010)

Growth mechanism of truncated triangular GaAs nanowires
Dahkki: Zou, J, et al.
Almmustuhtton: (2006)

Precursor flow rate manipulation for the controlled fabrication of twin-free GaAs nanowires on silicon substrates.
Dahkki: Kang, J, et al.
Almmustuhtton: (2012)

Super deformability and Young's modulus of GaAs nanowires.
Dahkki: Wang, Y, et al.
Almmustuhtton: (2011)

Formation of hierarchical InAs nanoring/GaAs nanowire heterostructures.
Dahkki: Paladugu, M, et al.
Almmustuhtton: (2009)

Evolution of epitaxial InAs nanowires on GaAs 111B.
Dahkki: Zhang, X, et al.
Almmustuhtton: (2009)

Tailoring GaAs, InAs, and InGaAs nanowires for optoelectronic device applications
Dahkki: Joyce, H, et al.
Almmustuhtton: (2011)

Tailoring GaAs, InAs, and InGaAs Nanowires for Optoelectronic Device Applications
Dahkki: Joyce, H, et al.
Almmustuhtton: (2011)

Understanding the kink formation in GaAs/InAs heterostructural nanowires
Dahkki: Paladugu, M, et al.
Almmustuhtton: (2006)

Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures
Dahkki: Paladugu, M, et al.
Almmustuhtton: (2008)

Taper-Free and Vertically Oriented Ge Nanowires on Ge/Si Substrates Grown by a Two-Temperature Process
Dahkki: Kim, J, et al.
Almmustuhtton: (2012)

Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures.
Dahkki: Paladugu, M, et al.
Almmustuhtton: (2007)

Evolution of wurtzite structured GaAs shells around InAs nanowire cores
Dahkki: Paladugu, M, et al.
Almmustuhtton: (2009)

Understanding the true shape of Au-catalyzed GaAs nanowires.
Dahkki: Jiang, N, et al.
Almmustuhtton: (2014)

Growth of straight InAs-on-GaAs nanowire heterostructures
Dahkki: Messing, M, et al.
Almmustuhtton: (2011)

Optimised two-temperature growth of GaAs nanowire s by metalorganic chemical vapour deposition
Dahkki: Joyce, H, et al.
Almmustuhtton: (2006)

Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process.
Dahkki: Joyce, H, et al.
Almmustuhtton: (2007)

Transient terahertz conductivity of GaAs nanowires
Dahkki: Parkinson, P, et al.
Almmustuhtton: (2007)

Spatially-resolved photoluminescence imaging of CdS and GaAs/AlGaAs nanowires
Dahkki: Smith, L, et al.
Almmustuhtton: (2007)

Optical properties of single InP and GaAs nanowire heterostructures
Dahkki: Jackson, H, et al.
Almmustuhtton: (2008)

Growth, structural and optical properties of high quality gaAs nanowires for optoelectronics
Dahkki: Joyce, H, et al.
Almmustuhtton: (2008)

Optoelectronic properties of GaAs nanowire photodetector
Dahkki: Wang, H, et al.
Almmustuhtton: (2012)

High Purity GaAs Nanowires Free of Planar Defects: Growth and Characterization
Dahkki: Joyce, H, et al.
Almmustuhtton: (2008)

Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores
Dahkki: Kim Y, et al.
Almmustuhtton: (2009-01-01)

Crystallographically driven Au catalyst movement during growth of InAs/GaAs axial nanowire heterostructures
Dahkki: Paladugu, M, et al.
Almmustuhtton: (2009)

Temperature dependence of photoluminescence from single core-shell GaAs-AlGaAs nanowires
Dahkki: Titova, L, et al.
Almmustuhtton: (2006)

Substrate and Mg doping effects in GaAs nanowires
Dahkki: Perumal Kannappan, et al.
Almmustuhtton: (2017-10-01)

Picosecond carrier lifetime measurements on a single GaAs Nanowire
Dahkki: Parkinson, P, et al.
Almmustuhtton: (2012)

GaAs Molecular Beam Epitaxy on (110)-Oriented Substrates
Dahkki: Evgeniy Klimov, et al.
Almmustuhtton: (2022-12-01)

High performance GaAs/AlGaAs radial heterostructure nanowires grown by MOCVD
Dahkki: Jiang, N, et al.
Almmustuhtton: (2013)

Optically pumped room-temperature GaAs nanowire lasers
Dahkki: Saxena, D, et al.
Almmustuhtton: (2013)

Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy.
Dahkki: Joyce, H, et al.
Almmustuhtton: (2013)

Strong carrier lifetime enhancement in GaAs nanowires coated with semiconducting polymer.
Dahkki: Yong, C, et al.
Almmustuhtton: (2012)

Electron mobilities approaching bulk limits in "surface-free" GaAs nanowires.
Dahkki: Joyce, H, et al.
Almmustuhtton: (2014)