Vertically standing Ge nanowires on GaAs(110) substrates

Vertically standing Ge nanowires on GaAs(110) substrates

The growth of epitaxial Ge nanowires is investigated on (100), (111) B and (110) GaAs substrates in the growth temperature range from 300 to 380°C. Unlike epitaxial Ge nanowires on Ge or Si substrates, Ge nanowires on GaAs substrates grow predominantly along the direction. Using this unique property...

Bibliografske podrobnosti
Main Authors:	Song, MS, Jung, J, Kim, Y, Wang, Y, Zou, J, Joyce, H, Gao, Q, Tan, H, Jagadish, C
Format:	Journal article
Jezik:	English
Izdano:	2008

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