Enhanced coherent THz emission from (100) GaAs in the presence of a magnetic field

The effects of magnetic fields up to 8T on the THz emission from a bulk (100) n-type molecular beam epitaxy (MBE)-grown GaAs sample were studied. Magnetic field was applied in the plane of incidence parallel to the reflected THz beam. The emitted THz radiation was measured both by an incoherent bolo...

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Hlavní autoři: Corchia, A, McLaughlin, R, Ciesla, C, Johnston, M, Arnone, D, Linfield, E, Davies, A, Simmons, M, Pepper, M
Médium: Journal article
Jazyk:English
Vydáno: IEEE 2000
Popis
Shrnutí:The effects of magnetic fields up to 8T on the THz emission from a bulk (100) n-type molecular beam epitaxy (MBE)-grown GaAs sample were studied. Magnetic field was applied in the plane of incidence parallel to the reflected THz beam. The emitted THz radiation was measured both by an incoherent bolometer detection scheme and coherent free-space electro-optic (EOS) sampling. Overall, significant data was obtained.